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• W4200323942 abstract "The piezoelectric properties of GaN enable it to sense mechanical strain. Effects of mechanical strain on device electrical response have been investigated in AlGaN/GaN HEMTs irradiated with ~10-keV X-rays. Radiation-induced charge trapping in these GaN-based HEMTs is attributed to fast-annealing donor-like defects, which are most likely O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>N</inf> impurities. Similar defects lead to threshold-voltage shifts, transconductance degradation, and enhanced low-frequency noise in AlGaN/GaN HEMTs. The amount of threshold-voltage variation induced by externally applied tensile stress decreases during irradiation exposure by as much as ~75% due to screening effects associated with charge generation, transport, and trapping." @default.
• W4200323942 created "2021-12-31" @default.
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• W4200323942 date "2021-10-26" @default.
• W4200323942 modified "2023-10-15" @default.
• W4200323942 title "Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs" @default.
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• W4200323942 doi "https://doi.org/10.1109/asicon52560.2021.9620350" @default.
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