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• W4200332556 abstract "This study compared the influences of threading edge and screw dislocation (TED and TSD) defects and their work functions on electrical property of leakage current statistically through the reverse current–voltage characteristics of dozens of pieces of 4H-SiC Schottky barrier diodes (SBDs). The experimental results indicated that TEDs correlated strongly more than TSDs to the leakage current in 4H-SiC SBDs under the soft-breakdown regime. Furthermore, Kelvin probe force microscopy revealed that the work function at TED site was about 15 meV lower than that at TSD site. We proposed a possible mechanism based on band-structure near the Schottky barrier, which illustrated that TED site possesses the larger degree of band bending and therefore increases the tunneling transmission probability in contrast to TSD site." @default.
• W4200332556 created "2021-12-31" @default.
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• W4200332556 date "2022-03-01" @default.
• W4200332556 modified "2023-09-23" @default.
• W4200332556 title "A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes" @default.
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• W4200332556 doi "https://doi.org/10.1016/j.matlet.2021.131506" @default.
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