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- W4200344504 abstract "To increase the efficiency in p‐type wafer‐based silicon heterojunction (SHJ) technology, one of the most crucial challenges is the achievement of excellent surface passivation. Herein, chemical passivation techniques known for n‐type technology are successfully applied on p‐type float–zone (FZ) wafers, and wafer surface passivation quality is correlated with parameters from plasma diagnostics, namely crystallization rate and electron temperature indices. It is shown that plasma ignition at higher powers than deposition powers enhances effective minority carrier lifetimes τ eff fourfold for p‐ (0.6–2.1 ms) and sixfold for n‐type (0.6–3.2 ms) wafers while giving opportunity to process under lower electron temperature indices during the nucleation phase. A subsequent hydrogen plasma treatment has a further beneficial effect on chemical passivation, leading to high effective minority carrier lifetimes of 4.5 and 3.1 ms, and implies open‐circuit voltages, i‐ V OC , of 735 and 720 mV for p‐ and n‐type wafers, respectively. In particular, cell precursors built on p‐type wafers demonstrate excellent surface passivation with τ eff and i‐ V OC (4.1 ms and 745 mV). Using these process optimizations, SHJ cells on both p‐ and n‐type wafers are fabricated with efficiencies exceeding 21%." @default.
- W4200344504 created "2021-12-31" @default.
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- W4200344504 date "2022-01-14" @default.
- W4200344504 modified "2023-09-25" @default.
- W4200344504 title "Optimization of Silicon Heterojunction Interface Passivation on p‐ and n‐Type Wafers Using Optical Emission Spectroscopy" @default.
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- W4200344504 doi "https://doi.org/10.1002/pssa.202100511" @default.
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