Matches in SemOpenAlex for { <https://semopenalex.org/work/W4200408084> ?p ?o ?g. }
- W4200408084 endingPage "798" @default.
- W4200408084 startingPage "794" @default.
- W4200408084 abstract "Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm−2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated." @default.
- W4200408084 created "2021-12-31" @default.
- W4200408084 creator A5001145257 @default.
- W4200408084 creator A5014362602 @default.
- W4200408084 creator A5018038396 @default.
- W4200408084 creator A5018896619 @default.
- W4200408084 creator A5022886406 @default.
- W4200408084 creator A5024706476 @default.
- W4200408084 creator A5034699232 @default.
- W4200408084 creator A5038895726 @default.
- W4200408084 creator A5042328722 @default.
- W4200408084 creator A5044609796 @default.
- W4200408084 creator A5045727808 @default.
- W4200408084 creator A5053781593 @default.
- W4200408084 creator A5056560457 @default.
- W4200408084 creator A5057522465 @default.
- W4200408084 creator A5057606053 @default.
- W4200408084 creator A5065004243 @default.
- W4200408084 creator A5068480804 @default.
- W4200408084 date "2022-09-01" @default.
- W4200408084 modified "2023-09-25" @default.
- W4200408084 title "Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate" @default.
- W4200408084 cites W1512089265 @default.
- W4200408084 cites W1963640329 @default.
- W4200408084 cites W1966838581 @default.
- W4200408084 cites W1970737739 @default.
- W4200408084 cites W1984903372 @default.
- W4200408084 cites W1993265856 @default.
- W4200408084 cites W1993582596 @default.
- W4200408084 cites W2002451755 @default.
- W4200408084 cites W2004787502 @default.
- W4200408084 cites W2007240063 @default.
- W4200408084 cites W2009425214 @default.
- W4200408084 cites W2011948946 @default.
- W4200408084 cites W2012308500 @default.
- W4200408084 cites W2017239091 @default.
- W4200408084 cites W2018668712 @default.
- W4200408084 cites W2019539250 @default.
- W4200408084 cites W2028610177 @default.
- W4200408084 cites W2033987189 @default.
- W4200408084 cites W2039717835 @default.
- W4200408084 cites W2044583065 @default.
- W4200408084 cites W2053401713 @default.
- W4200408084 cites W2055054777 @default.
- W4200408084 cites W2059442265 @default.
- W4200408084 cites W2066567015 @default.
- W4200408084 cites W2066733751 @default.
- W4200408084 cites W2070707909 @default.
- W4200408084 cites W2082072188 @default.
- W4200408084 cites W2092885510 @default.
- W4200408084 cites W2093387727 @default.
- W4200408084 cites W2324595822 @default.
- W4200408084 cites W2799682209 @default.
- W4200408084 cites W2808671009 @default.
- W4200408084 cites W3153286445 @default.
- W4200408084 doi "https://doi.org/10.1016/j.fmre.2021.09.020" @default.
- W4200408084 hasPublicationYear "2022" @default.
- W4200408084 type Work @default.
- W4200408084 citedByCount "0" @default.
- W4200408084 crossrefType "journal-article" @default.
- W4200408084 hasAuthorship W4200408084A5001145257 @default.
- W4200408084 hasAuthorship W4200408084A5014362602 @default.
- W4200408084 hasAuthorship W4200408084A5018038396 @default.
- W4200408084 hasAuthorship W4200408084A5018896619 @default.
- W4200408084 hasAuthorship W4200408084A5022886406 @default.
- W4200408084 hasAuthorship W4200408084A5024706476 @default.
- W4200408084 hasAuthorship W4200408084A5034699232 @default.
- W4200408084 hasAuthorship W4200408084A5038895726 @default.
- W4200408084 hasAuthorship W4200408084A5042328722 @default.
- W4200408084 hasAuthorship W4200408084A5044609796 @default.
- W4200408084 hasAuthorship W4200408084A5045727808 @default.
- W4200408084 hasAuthorship W4200408084A5053781593 @default.
- W4200408084 hasAuthorship W4200408084A5056560457 @default.
- W4200408084 hasAuthorship W4200408084A5057522465 @default.
- W4200408084 hasAuthorship W4200408084A5057606053 @default.
- W4200408084 hasAuthorship W4200408084A5065004243 @default.
- W4200408084 hasAuthorship W4200408084A5068480804 @default.
- W4200408084 hasBestOaLocation W42004080841 @default.
- W4200408084 hasConcept C111368507 @default.
- W4200408084 hasConcept C120665830 @default.
- W4200408084 hasConcept C121332964 @default.
- W4200408084 hasConcept C121349320 @default.
- W4200408084 hasConcept C127313418 @default.
- W4200408084 hasConcept C158355884 @default.
- W4200408084 hasConcept C159122135 @default.
- W4200408084 hasConcept C159985019 @default.
- W4200408084 hasConcept C178790620 @default.
- W4200408084 hasConcept C185592680 @default.
- W4200408084 hasConcept C192562407 @default.
- W4200408084 hasConcept C2777289219 @default.
- W4200408084 hasConcept C49040817 @default.
- W4200408084 hasConcept C85080765 @default.
- W4200408084 hasConceptScore W4200408084C111368507 @default.
- W4200408084 hasConceptScore W4200408084C120665830 @default.
- W4200408084 hasConceptScore W4200408084C121332964 @default.
- W4200408084 hasConceptScore W4200408084C121349320 @default.
- W4200408084 hasConceptScore W4200408084C127313418 @default.
- W4200408084 hasConceptScore W4200408084C158355884 @default.