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• W4200410311 endingPage "155703" @default.
• W4200410311 startingPage "155703" @default.
• W4200410311 abstract "A large coercive fieldECof HfO2based ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduceECby fabricating nanolaminate Hf0.5Zr0.5O2/ZrO2(HZZ) thin films is used, followed by an ensuing annealing process at a comparatively high temperature 700 °C. High-resolution electron microscopy imaging detects tetragonal-like domain walls between orthorhombic polar regions. These walls decrease the potential barrier of polarization reversal in HfO2based films compared to the conventional domain walls with a single non-polar spacer, causing about a 40% decrease inEC. Capacitance versus electric field measurements on HZZ thin film uncovered a substantial increase of dielectric permittivity near theECcompared to the conventional Hf0.5Zr0.5O2thin film, justifying the higher mobility of domain walls in the developed HZZ film. The tetragonal-like regions served as grease easing the movement of the domain wall and reducingEC." @default.
• W4200410311 created "2021-12-31" @default.
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• W4200410311 date "2022-01-18" @default.
• W4200410311 modified "2023-10-18" @default.
• W4200410311 title "A grease for domain walls motion in HfO₂-based ferroelectrics" @default.
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• W4200410311 doi "https://doi.org/10.1088/1361-6528/ac4679" @default.
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