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- W4200415767 abstract "Multijunction solar cells (SCs) have excellent potential to achieve higher efficiency for increased sun concentration. The two-step photon absorption in the quantum wells (QWs) can further enhance the performance of the solar cell. A GaInP/GaAs dual junction solar cell is proposed with InP QWs. The type-A InP QWs are inserted in the intrinsic region of the top cell because in the top cell, short-circuit current governs the overall cell current. The voltage preservation is applied by careful structuring of the p–i–n region at the top cell. The sub-band photon absorption enhances the external and internal quantum efficiency (QE) of the top cell, and both cells have above 90% QEs. The peak efficiencies of 44.09% under 1 sun and 48.18% under 1000 sun concentrations are achieved, and the performance is compared with the available experimental and simulated data." @default.
- W4200415767 created "2021-12-31" @default.
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- W4200415767 date "2022-01-07" @default.
- W4200415767 modified "2023-10-01" @default.
- W4200415767 title "Dual Junction GaInP/GaAs Solar Cell with Enhanced Efficiency Using Type‐A InP Quantum Wells" @default.
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- W4200415767 doi "https://doi.org/10.1002/pssa.202100448" @default.
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