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- W4200426900 abstract "Solid-state incandescent light emitting devices made from MOS capacitors with the WO x embedded Zr-doped HfO x gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfO x and WO x , gate dielectrics were also fabricated for comparison. The device with the WO x embedded gate dielectric layer had electrical and light emitting characteristics between that with WO x gate dielectric layer and that with the Zr-doped HfO x but no WO x embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WO x embedded Zr-doped HfO x gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required." @default.
- W4200426900 created "2021-12-31" @default.
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- W4200426900 date "2021-12-01" @default.
- W4200426900 modified "2023-09-24" @default.
- W4200426900 title "Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WO<sub>x</sub> Embedded Zr-Doped HfO<sub>x</sub> Gate Dielectric" @default.
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- W4200426900 doi "https://doi.org/10.1149/2162-8777/ac44f5" @default.
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