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• W4200461566 endingPage "111838" @default.
• W4200461566 startingPage "111838" @default.
• W4200461566 abstract "In this work, we present the fabrication of heterojunction Cu 2 SnS 3 /ZnS photovoltaic cell using indigenously developed cost-effective ultrasonic spray pyrolysis method. Substrate temperature of as-prepared films have been varied from 350 °C to 500 °C. Temperature played a key role in enhancing the optical properties of ZnS films making it useable as window layer for solar cell. The p-type Cu 2 SnS 3 (CTS) absorber layer of the cell is grown at optimized substrate temperature (500 °C) and with optimized Cu and Sn composition. Finally, solar cell is fabricated with these optimized p and n layers and have the structure of glass/FTO/Cu 2 SnS 3 /ZnS/Ag with V oc = 685 mV, J SC = 1.8 mA/cm 2 , fill factor = 39% and solar efficiency = 0.5%. A detailed discussion is given in overcoming the intricacies involved in the cell and improving the efficiency. • A low-cost single step deposition of earth abundant window layer ZnS films. • Substrate temperature is optimized for better transmittance of ZnS films. • ZnS exhibited n type conductivity which is essential to form the PN junction for solar cell application. • Solar cell has been fabricated using low cost indigenously developed using ultrasonic spray pyrolysis techniques." @default.
• W4200461566 created "2021-12-31" @default.
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• W4200461566 date "2022-01-01" @default.
• W4200461566 modified "2023-10-02" @default.
• W4200461566 title "Optimization and fabrication of low cost Cu2SnS3/ZnS thin film heterojunction solar cell using ultrasonic spray pyrolysis" @default.
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• W4200461566 doi "https://doi.org/10.1016/j.optmat.2021.111838" @default.
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