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• W4200581646 abstract "Abstract In this paper, we present the results of an experimental study of the influence of the ultra-low arsenic flux on the parameters of In nanodroplets obtained by droplet epitaxy on the GaAs substrate. We demonstrate that the arsenic flux can be used to alter the size of droplets without changing their surface density. An increase in the arsenic flux leads to a reduction of the nanostructure size or their complete decay. However, we demonstrate that certain growth conditions allow providing saturation of the size of nanostructures (∼30 nm) which ensures good reproducibility of the process. The mechanism of ring and hole formation at various arsenic fluxes is also discussed." @default.
• W4200581646 created "2021-12-31" @default.
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• W4200581646 date "2021-12-01" @default.
• W4200581646 modified "2023-10-16" @default.
• W4200581646 title "Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy" @default.
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• W4200581646 doi "https://doi.org/10.1088/1742-6596/2086/1/012017" @default.
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