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- W4200604214 abstract "All-inorganic perovskites consisting of only inorganic elements have been recently considered as highly stable semiconductors for photoactive layer of optoelectronics applications. However, the formation of high-quality thin film and trap-reduced interface has still remains an important task, which should be solved for improving the performances of all-inorganic perovskite-based photovoltaics. Here, we adopted facile method that could reduce charge-carrier recombination by depositing a passivation agent on the top surface of the CsPbBr3 all-inorganic perovskite layer. We also found that the CsPbBr3 perovskite photovoltaic prepared from surface treatment method using n-octylammonium bromide provides an improved stability in ambient environment and 1-sun illuminating condition. Therefore, the perovskite photovoltaics fabricated from our approach offered an improved power conversion efficiency of 5.44% over that of the control device without surface treatment (4.12%)." @default.
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- W4200604214 date "2021-12-20" @default.
- W4200604214 modified "2023-10-16" @default.
- W4200604214 title "Surface-Passivated CsPbBr3 for Developing Efficient and Stable Perovskite Photovoltaics" @default.
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- W4200604214 doi "https://doi.org/10.3390/cryst11121588" @default.
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