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- W4200609140 abstract "• Hump emerges in the transfer curves of a-ITO TFTs after 450 K vacuum annealing. • It is demonstrated that the hump is caused by shallow donor-like states. • The shallow donors are ascribed to thermal annealing induced oxygen defects. Amorphous indium–tin-oxide (a-ITO) films are fabricated by pulsed laser deposition at room temperature and annealed in vacuum. Although vacuum annealing could ameliorate the carrier mobility and subthreshold swing, the threshold voltage shows a negative shift upon vacuum annealing at 450 K, and a hump emerges in the subthreshold region. The density of electronic states extracted by Grünewald method demonstrate that the hump is caused by shallow donor-like states. Furthermore, the X-ray photoelectron spectra and the photoconductivity experiment reveal that the shallow donors are ascribed to the increased oxygen defects upon thermal annealing." @default.
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- W4200609140 date "2022-03-01" @default.
- W4200609140 modified "2023-10-16" @default.
- W4200609140 title "Influences of vacuum annealing induced oxygen defects on the transfer characteristics of a-ITO thin-film transistors" @default.
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- W4200609140 doi "https://doi.org/10.1016/j.matlet.2021.131565" @default.
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