FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4200617800> ?p ?o ?g. }

• W4200617800 endingPage "175105" @default.
• W4200617800 startingPage "175105" @default.
• W4200617800 abstract "Abstract Flexible integrated circuits have gained a lot of attention in recent years for their emerging applications in wearable electronics. Flexible thin-film transistors (TFTs) with low-costs and high-performance are highly desirable as essential and fundamental elements for most flexible applications. In this paper, we fabricate single-crystalline silicon nanomembrane (SiNM)-based TFTs with anodized aluminum oxide (AAO) as a dielectric material on glass and flexible plastic substrates. Good quality AAO was obtained on plastic substrates at room temperature. Atomic force microscopy (AFM)was used for the surface morphology of the AAO gate dielectric layers on different substrates (i.e. glass, polyethylene terephthalate (PET), and SU-8 coated PET). The electrical characteristics of the AAO gate dielectric layers on different substrates were also analyzed with metal–insulator–metal capacitors. The SiNMs were processed with a complementary metal oxide semiconductor (CMOS) compatible semiconductor process (e.g. photolithography, ion implantation, thermal annealing, reactive ion etching, metal evaporation, etc), and then transferred to the substrates with AAO/aluminum stack layers. The performance of the transistors on glass and plastic substrates was characterized. Compared with the TFT fabricated on a glass substrate, the TFT fabricated directly on a PET substrate had lower performance due to poor surface roughness. For optimization of the surface roughness, the PET was modified with a coating of SU-8 photoresist. In this way, the TFT had properties close to that on a glass substrate. AAO that can be manufactured at room temperature provides a simple and low-cost solution for high-performance flexible single-crystalline SiNM TFTs." @default.
• W4200617800 created "2021-12-31" @default.
• W4200617800 creator A5002707063 @default.
• W4200617800 creator A5018084934 @default.
• W4200617800 creator A5036016529 @default.
• W4200617800 creator A5044526068 @default.
• W4200617800 creator A5052487317 @default.
• W4200617800 creator A5060495225 @default.
• W4200617800 creator A5077885025 @default.
• W4200617800 date "2022-01-31" @default.
• W4200617800 modified "2023-09-27" @default.
• W4200617800 title "Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates" @default.
• W4200617800 cites W1974650789 @default.
• W4200617800 cites W1976993025 @default.
• W4200617800 cites W1993360040 @default.
• W4200617800 cites W1998675172 @default.
• W4200617800 cites W2024807010 @default.
• W4200617800 cites W2026386847 @default.
• W4200617800 cites W2027403899 @default.
• W4200617800 cites W2030367837 @default.
• W4200617800 cites W2061453480 @default.
• W4200617800 cites W2070839040 @default.
• W4200617800 cites W2074012670 @default.
• W4200617800 cites W2074130922 @default.
• W4200617800 cites W2092987851 @default.
• W4200617800 cites W2096212121 @default.
• W4200617800 cites W2100903324 @default.
• W4200617800 cites W2107856038 @default.
• W4200617800 cites W2109547541 @default.
• W4200617800 cites W2123223906 @default.
• W4200617800 cites W2127722507 @default.
• W4200617800 cites W2128260252 @default.
• W4200617800 cites W2133423794 @default.
• W4200617800 cites W2157426451 @default.
• W4200617800 cites W2210607056 @default.
• W4200617800 cites W2264088247 @default.
• W4200617800 cites W2284692170 @default.
• W4200617800 cites W2310358397 @default.
• W4200617800 cites W2319873661 @default.
• W4200617800 cites W2340598285 @default.
• W4200617800 cites W2413471669 @default.
• W4200617800 cites W2503365004 @default.
• W4200617800 cites W2519854756 @default.
• W4200617800 cites W2521521003 @default.
• W4200617800 cites W2543981262 @default.
• W4200617800 cites W2573024592 @default.
• W4200617800 cites W2605222172 @default.
• W4200617800 cites W2605620125 @default.
• W4200617800 cites W2772085089 @default.
• W4200617800 cites W2788045153 @default.
• W4200617800 cites W2789549635 @default.
• W4200617800 cites W2790358582 @default.
• W4200617800 cites W2803983715 @default.
• W4200617800 cites W2850000123 @default.
• W4200617800 cites W2887826512 @default.
• W4200617800 cites W2922751908 @default.
• W4200617800 cites W2946172452 @default.
• W4200617800 cites W3000212203 @default.
• W4200617800 cites W3029684493 @default.
• W4200617800 cites W3044509877 @default.
• W4200617800 cites W3059609044 @default.
• W4200617800 cites W307077916 @default.
• W4200617800 cites W3081824285 @default.
• W4200617800 cites W3092120505 @default.
• W4200617800 cites W3098304597 @default.
• W4200617800 cites W3105253670 @default.
• W4200617800 cites W3111538069 @default.
• W4200617800 cites W3146327447 @default.
• W4200617800 cites W3192623454 @default.
• W4200617800 cites W3212348119 @default.
• W4200617800 doi "https://doi.org/10.1088/1361-6463/ac453c" @default.
• W4200617800 hasPublicationYear "2022" @default.
• W4200617800 type Work @default.
• W4200617800 citedByCount "3" @default.
• W4200617800 countsByYear W42006178002022 @default.
• W4200617800 crossrefType "journal-article" @default.
• W4200617800 hasAuthorship W4200617800A5002707063 @default.
• W4200617800 hasAuthorship W4200617800A5018084934 @default.
• W4200617800 hasAuthorship W4200617800A5036016529 @default.
• W4200617800 hasAuthorship W4200617800A5044526068 @default.
• W4200617800 hasAuthorship W4200617800A5052487317 @default.
• W4200617800 hasAuthorship W4200617800A5060495225 @default.
• W4200617800 hasAuthorship W4200617800A5077885025 @default.
• W4200617800 hasConcept C105487726 @default.
• W4200617800 hasConcept C107365816 @default.
• W4200617800 hasConcept C111368507 @default.
• W4200617800 hasConcept C119599485 @default.
• W4200617800 hasConcept C127313418 @default.
• W4200617800 hasConcept C127413603 @default.
• W4200617800 hasConcept C133386390 @default.
• W4200617800 hasConcept C159985019 @default.
• W4200617800 hasConcept C162743726 @default.
• W4200617800 hasConcept C165801399 @default.
• W4200617800 hasConcept C166972891 @default.
• W4200617800 hasConcept C171250308 @default.
• W4200617800 hasConcept C172385210 @default.
• W4200617800 hasConcept C192562407 @default.
• W4200617800 hasConcept C22016385 @default.

• next