Matches in SemOpenAlex for { <https://semopenalex.org/work/W4205418750> ?p ?o ?g. }
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- W4205418750 abstract "High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular beam epitaõy. The current and optical confinement is provided by a lateral-structured buried tunnel junction with etching depth of <inline-formula> <tex-math notation=LaTeX>$sim 25$ </tex-math></inline-formula> nm. It is shown that optimal diameter of the buried tunnel junction for high-power single mode emission is <inline-formula> <tex-math notation=LaTeX>$sim 5$ </tex-math></inline-formula>-<inline-formula> <tex-math notation=LaTeX>$6~mu text{m}$ </tex-math></inline-formula>. The VCSEL demonstrates more than 6 mW single mode continuous-wave power and a threshold current less than 1.5 mA at 20 °C. The output optical power exceeds 1 mW at 85 °C. A -3dB modulation bandwidth up to 8 GHz and 6 GHz is obtained at 20 °C and 85 °C, respectively. The gain coefficient of <inline-formula> <tex-math notation=LaTeX>$sim 650$ </tex-math></inline-formula> cm<sup>−1</sup> and the transparency current density of <inline-formula> <tex-math notation=LaTeX>$sim 630$ </tex-math></inline-formula> A/cm<sup>2</sup> are estimated at zero gain-to-cavity detuning (sim 60 °C). The ultimate low internal optical losses about 0.08 % per round-trip (distributed losses ~3.2 cm<sup>−1</sup>) at 20 °C and 0.13 % per round-trip (distributed losses ~5.5 cm<sup>−1</sup>) at 100 °C were obtained." @default.
- W4205418750 created "2022-01-25" @default.
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- W4205418750 date "2022-04-01" @default.
- W4205418750 modified "2023-10-14" @default.
- W4205418750 title "High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance" @default.
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