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• W4205497029 abstract "In this article, the planar <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ junctionless transistors with/without unintentional doping (UID) buffer layer are numerically investigated. It was found that the double-layer Ga₂O₃ MOSFETs (epilayer/buffer layer) show a trade-off between threshold voltage (<inline-formula> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula>) and device reliability (resulting from anomalous Fe out-diffusion), as a function of the thickness (<inline-formula> <tex-math notation=LaTeX>${T}_{text {buf}}$ </tex-math></inline-formula>) and carrier concentrations (<inline-formula> <tex-math notation=LaTeX>${N}_{text {buf}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ buffer layer. The simulation results show that an adequate buffer layer (200 nm <inline-formula> <tex-math notation=LaTeX>$ < {T}_{text {buf}} < {500}$ </tex-math></inline-formula> nm, <inline-formula> <tex-math notation=LaTeX>${N}_{text {buf}} < {5}times {10}^{{14}}$ </tex-math></inline-formula> cm^&#x2212;3) is beneficial to the pinch-off characteristic of <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ planar MOSFETs. A novel triple-layer MOSFET (introducing a low-doped <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ surface layer above the epilayer) is subsequently proposed and demonstrated to be an easy pathway to modulate <inline-formula> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> by adjusting the thickness and doping concentration of surface layer. In addition, the effect of the lateral extension N^&#x002B; region is also discussed. As a result, the triple-layer <inline-formula> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula>-Ga₂O₃ MOSFET with an optimized dimension can achieve positive enhancement-mode and better device performance: breakdown voltage (<inline-formula> <tex-math notation=LaTeX>${V}_{text {br}}$ </tex-math></inline-formula>) and power figures of merit (P-FOM) are improved by 173.71&#x0025; and 65.37&#x0025;, respectively, while specific ON-resistance is increased by 391.35&#x0025;." @default.
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• W4205497029 date "2022-02-01" @default.
• W4205497029 modified "2023-10-18" @default.
• W4205497029 title "Analytical Model and Structure of the Multilayer Enhancement-Mode β-Ga₂O₃ Planar MOSFETs" @default.
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• W4205497029 doi "https://doi.org/10.1109/ted.2021.3137097" @default.
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