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- W4205745958 abstract "Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching. Here we present a dual-gate transistor structure to suppress the dynamic on-resistance increase. The auxiliary gate under a proper fixed voltage is able to induce additional electrons to compensate the channel carrier loss during main gate switching, leading to a lower dynamic on-resistance. In this work, we benchmarked the fundamental electrical properties of both single-gate and dual-gate HEMTs. We further extracted the dynamic electrical properties by stressing the devices with short pulses. The results suggest a significant mitigation of current collapse of a dual-gate HEMT under a proper bias applied on the auxiliary gate electrode. The physical mechanism based on the charge distribution in the channel is employed to explain the observations." @default.
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- W4205745958 date "2022-01-01" @default.
- W4205745958 modified "2023-09-30" @default.
- W4205745958 title "Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si" @default.
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- W4205745958 doi "https://doi.org/10.1109/jeds.2021.3132429" @default.
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