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- W4206485732 abstract "Practical device applications of magnetic multilayers with perpendicular magnetic anisotropy (PMA) usually need to match the mature complementary metal-oxide-semiconductor (CMOS) integrated techniques, which require high temperature annealing during the back-end-of-line process. Here, we report the realization of PMA in the W buffered CoFeB/MgO stack by inserting a thin Zr dusting layer between CoFeB and MgO layers. An ultra-high thermal stability of PMA in the W/CoFeB/Zr/MgO stack is observed, which is robust upon annealing at 600 °C. The establishment of PMA in W/CoFeB/Zr/MgO is due to the formation of an interface layer between CoFeB and MgO doped with oxidized Zr. After annealing at 540 °C, the magnetic interfacial anisotropy density reaches 3.08 erg/cm2, which is much higher than those in previous reports. The results suggest that the W/CoFeB/Zr/MgO stack with extra high annealing stability is a potential candidate to achieving the practical application of spin-logic device that is compatible with the mature CMOS integrated techniques." @default.
- W4206485732 created "2022-01-25" @default.
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- W4206485732 date "2022-01-10" @default.
- W4206485732 modified "2023-10-17" @default.
- W4206485732 title "Ultra-high thermal stability of perpendicular magnetic anisotropy in the W buffered CoFeB/MgO stacks with Zr dusting layers" @default.
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- W4206485732 doi "https://doi.org/10.1063/5.0072848" @default.
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