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- W4206827178 abstract "In this article, we experimentally demonstrate an on-chip optical power monitoring at the near-infrared spectral region (1520–1600 nm) using the waveguide bolometric detector with a TiO<sub><i>x</i></sub>/Ti/TiO<sub><i>x</i></sub> tri-layer film based on the silicon-on-insulator (SOI) platform. For the incident light absorption causing a heat generation, a heavily doped (<inline-formula> <tex-math notation=LaTeX>${n}^{+}$ </tex-math></inline-formula>) Si waveguide is introduced to utilize the mechanism of free-carrier absorption (FCA), and a metal (Au) strip is deposited onto the <inline-formula> <tex-math notation=LaTeX>${n}^{+}$ </tex-math></inline-formula> Si waveguide to further enhance the light absorption. A bolometric material of TiO<sub><i>x</i></sub>/Ti/TiO<sub><i>x</i></sub> tri-layer film is integrated for the thermal-to-electrical conversion. As a result, it exhibits superior performances, which are the temperature coefficient of resistance (TCR) of −2.296%/K and the maximum sensitivity of −46.45%/mW with a low wavelength-dependency. In addition, a rapid response time is obtained with the rise/fall time of <inline-formula> <tex-math notation=LaTeX>$24.6 ~mu text{s}/29.8 ~mu text{s}$ </tex-math></inline-formula>, which is enough for a variety of optical sensing applications. This work demonstrates the waveguide-based bolometric photodetection using the FCA effect, for the first time to our knowledge, which can also be simply extended for the operation wavelength range to the mid-infrared (MIR) spectral region for bio/chemical sensing applications." @default.
- W4206827178 created "2022-01-25" @default.
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- W4206827178 date "2022-04-01" @default.
- W4206827178 modified "2023-10-16" @default.
- W4206827178 title "TiO<sub>x</sub>/Ti/TiO<sub>x</sub> Tri-Layer Film-Based Waveguide Bolometric Detector for On-Chip Si Photonic Sensor" @default.
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- W4206827178 doi "https://doi.org/10.1109/ted.2021.3132264" @default.
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