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- W4207027546 abstract "To print thin-film transistors and avoid vacuum deposition and lithography processes, a high-quality printed insulator is required in addition to semiconductors and conductors. A straightforward method for printing a dense and thin gate oxide with a leakage current of less than 38 nA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 1 MV/cm, a breakdown voltage greater than 4.5 MV/cm, and a relative permittivity of approximately 10 is described in this paper. We printed these TFTs on finely polished high purity aluminum sheets. After preparing the Al substrate with controlled oxidation to create the gate dielectric, we prepared a fresh solution of NH <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> OH:H <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> :H <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O and immediately inkjet printed it on the substrate. Hereby the gate oxide is formed after 10 min without any additional annealing process. We rinsed the devices in ultrapure water and blow-dried them with nitrogen for 10 minutes after printing. Afterward, we printed and annealed indium gallium zinc oxide (IGZO) as a semiconductor. Finally, we printed the sources/drains and contacts with silver ink." @default.
- W4207027546 created "2022-01-26" @default.
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- W4207027546 date "2021-12-12" @default.
- W4207027546 modified "2023-09-28" @default.
- W4207027546 title "Inkjet-printed high quality gate oxide for fully printed IGZO transistors" @default.
- W4207027546 doi "https://doi.org/10.1109/nmdc50713.2021.9677516" @default.
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