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- W4210248051 abstract "Graphene is considered a promising transistor component for future integrated circuits. Due to high operating speed and low power consumption, high on/off ratio and low off state current are ideal transistors. However, due to the inherent ambipolarity of graphene, a significant ambipolarity behavior with a fairly high off state current is usually observed in graphene transistors. In this work, an asymmetric gate design combined with a chemically doped method to suppress the ambipolarity of graphene transistors was reported. Thus, the off-state current is effectively reduced and the on-state current is increased. The on/off ratio is increased by nearly two orders of magnitude. Compare to the normal gate structure device, better threshold swing and smaller threshold voltage are obtained." @default.
- W4210248051 created "2022-02-08" @default.
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- W4210248051 date "2022-04-01" @default.
- W4210248051 modified "2023-09-27" @default.
- W4210248051 title "Graphene film transistors based on asymmetric gate design combining with chemical doping" @default.
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- W4210248051 doi "https://doi.org/10.1016/j.mseb.2022.115628" @default.
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