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• W4210813225 abstract "Precursor stabilized Gallium doped ZnO thin films were grown using spray pyrolysis on glass substrates. UV–vis spectrophotometry and an X-ray diffractometer were used to characterise the GZO thin films. Gallium is doped with a concentration ranging from 1 at% to 4 at% and its effects on structural and optical features were studied. XRD studies found the thin films to be polycrystalline with a hexagonal wurtzite structure. In the visible range of wavelength (400–800 nm), all GZO films exhibit average transmittance above 90%, with a pronounced absorption edge in the UV area. The PL emission spectra show the Near-band-edge emissions at about 389 nm and strong deep-level emissions from oxygen defect states at about 545 nm are observed in all the films. With increase in concentration of Ga, the intensity of these two bands decreased." @default.
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• W4210813225 date "2022-01-01" @default.
• W4210813225 modified "2023-09-27" @default.
• W4210813225 title "Optical and photoluminescence studies of precursor stabilized gallium zinc oxide thin films" @default.
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• W4210813225 doi "https://doi.org/10.1016/j.matpr.2022.01.194" @default.
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