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• W4211036649 endingPage "289" @default.
• W4211036649 startingPage "233" @default.
• W4211036649 abstract "Semiconductors often contain dopants or impurities. Such species constitute extrinsic defects that can affect the electrical properties of the solid to the point of changing the dominant charge states of intrinsic defects. This chapter summarizes the literature regarding the structure, ionization levels, and diffusion of extrinsic defects. The literature for bulk solids is enormous for Si, and quite large for Ge as well as GaAs – which is not surprising given the extensive use of these materials in microelectronics. The literature is also significant for other III-V materials, TiO2, and a variety of other oxides taken as a group. Semiconductor surfaces also support extrinsic defects that typically exhibit behavior analogous to that in the bulk, but differing in details. This section treats Si, GaAs, and TiO2 surfaces that support defects derived from elements finding extensive use as intentional bulk dopants, or for which there otherwise exists a significant literature on ionization. The discussion focuses mostly on structure, as few ionization levels have been determined and diffusion is treated in Chap. 7. The literature is small compared to that for bulk defects, mostly because there exist fewer direct applications and techniques that reliably track charging behavior." @default.
• W4211036649 created "2022-02-13" @default.
• W4211036649 date "2008-11-10" @default.
• W4211036649 modified "2023-09-25" @default.
• W4211036649 title "Extrinsic Defects" @default.
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