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• W4213049747 abstract "Ferroelectricity of Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Zr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin films prepared by plasma-enhanced atomic layer deposition (PEALD) with and without TiN electrodes was demonstrated. Excellent ferroelectricity of Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Zr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin films was confirmed by both polarization versus voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${P}$ </tex-math></inline-formula> ,– <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> ) and piezoresponse force microscopy (PFM) hysteresis loops. The <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2{P}_{r}$ </tex-math></inline-formula> value can reach as high as <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$53 ~mu text{C}$ </tex-math></inline-formula> /cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> under a sweep voltage of 8 V with TiN top and bottom electrodes. By introducing Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> capping layer (AOCL), the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2{P}_{r}$ </tex-math></inline-formula> value of the sample can reach <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$47 mu text{C}$ </tex-math></inline-formula> /cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> that is less sensitive to the annealing temperatures and electrode materials. At the same time, the leakage current is also significantly reduced. The typical <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${P}$ </tex-math></inline-formula> ,– <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> loops can always be observed for samples with different electrode materials or annealing temperatures. These results are beneficial to practical applications in nonvolatile memories and synaptic devices." @default.
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• W4213049747 date "2022-04-01" @default.
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• W4213049747 title "Ferroelectricity of Hf_0.5Zr_0.5O₂ Thin Films Free From the Influence of Electrodes by Using Al₂O₃ Capping Layers" @default.
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• W4213049747 doi "https://doi.org/10.1109/ted.2022.3146098" @default.
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