Matches in SemOpenAlex for { <https://semopenalex.org/work/W4213268325> ?p ?o ?g. }
- W4213268325 abstract "Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high-performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in all-sputtered BiSb topological insulator - perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the industry-friendly magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of $theta$$_{SH}$ = 12.3 and high electrical conductivity of $sigma$ = 1.5x$10^5$ $Omega^{-1}$m$^{-1}$. Our results demonstrate the mass production capability of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices." @default.
- W4213268325 created "2022-02-24" @default.
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- W4213268325 date "2022-02-22" @default.
- W4213268325 modified "2023-10-14" @default.
- W4213268325 title "Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers" @default.
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- W4213268325 doi "https://doi.org/10.1038/s41598-022-06779-3" @default.
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