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- W4214850897 abstract "In this paper, a substrate interface passivation solution based on high-resistivity (HR) substrates buried PN junctions with aggressive pitch is presented. C-V measurements, small- and large-signal simulations and measurements are reported. The HR+PN solution presented achieves effective resistivity values reaching 2 kΩ.cm with 0.1 dB/mm loss at 6 GHz. We report that this PN-passivated substrate provides good linearity and has no bias-dependency in its large-signal performance. This solution is suitable for local Parasitic Surface Conduction (PSC) interface passivation for next generations of wireless communications." @default.
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- W4214850897 date "2022-01-16" @default.
- W4214850897 modified "2023-10-14" @default.
- W4214850897 title "N<sub>ox</sub> and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates" @default.
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- W4214850897 doi "https://doi.org/10.1109/sirf53094.2022.9720037" @default.
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