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• W4214854561 startingPage "e0264483" @default.
• W4214854561 abstract "Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work." @default.
• W4214854561 created "2022-03-05" @default.
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• W4214854561 date "2022-03-03" @default.
• W4214854561 modified "2023-09-26" @default.
• W4214854561 title "Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model" @default.
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• W4214854561 doi "https://doi.org/10.1371/journal.pone.0264483" @default.
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