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• W4214874366 abstract "Abstract In this study, we successfully achieved flat cutoff frequency ( f T ) and maximum oscillation frequency ( f max ) across a wide bias range on InP-based high-electron-mobility transistors (HEMTs) using a steam-annealed ultrathin-Al 2 O 3 gate dielectric due to the reduction in gate leakage current and increase in forward breakdown voltage. Fourier transform infrared spectroscopy analysis demonstrated that steam annealing reduced defects in atomic layer deposited-Al 2 O 3 because of the hydrolysis of carbon impurities and that reducing electron traps suppressed the increase in sheet resistance due to dielectric passivation. Consequently, the insulated-gate HEMTs developed show a high f max of > 700 GHz across a wide bias range." @default.
• W4214874366 created "2022-03-05" @default.
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• W4214874366 date "2022-03-11" @default.
• W4214874366 modified "2023-10-18" @default.
• W4214874366 title "Improved f _T/f _max in wide bias range by steam-annealed ultrathin-Al₂O₃ gate dielectrics for InP-based high-electron-mobility transistors" @default.
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• W4214874366 doi "https://doi.org/10.35848/1882-0786/ac5a17" @default.
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