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- W4220664110 abstract "Abstract Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and temperature. An investigation on the joint effect of environmental moisture and working temperature on device characteristics and instability is becoming necessary. However, few related studies have been performed. In this work, a low‐temperature (LT) annealing in air is proposed to simulate the working conditions of TFTs in display applications. The effect of moisture exchange caused by LT annealing on device characteristics and instability of InSnZnO (ITZO) TFTs is systematically investigated. Combined with X‐ray photoelectron spectroscopy analysis, TCAD design simulation, and the measurement of relative humidity (RH) change on the device surface, a model considering water diffusion and water ionization is proposed. The negative shift of the transfer curve is attributed to the extra electrons released from the water ionization and the positive‐bias‐stress‐induced instability is mainly attributed to the generation of interstitial/substitutional hydrogens and aggregation of hydrogen ions at the backchannel. The temperature and the RH on the device surface jointly determine the moisture diffusion direction. Furthermore, the model is verified by an LT vacuum annealing. The results and the model will be beneficial for the further reliable design of ITZO TFTs in commercial applications." @default.
- W4220664110 created "2022-04-03" @default.
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- W4220664110 date "2022-03-27" @default.
- W4220664110 modified "2023-10-03" @default.
- W4220664110 title "Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors" @default.
- W4220664110 cites W1932395174 @default.
- W4220664110 cites W1957831488 @default.
- W4220664110 cites W1965678562 @default.
- W4220664110 cites W1969619515 @default.
- W4220664110 cites W1969780710 @default.
- W4220664110 cites W1969975946 @default.
- W4220664110 cites W1975215680 @default.
- W4220664110 cites W1987259331 @default.
- W4220664110 cites W1990798163 @default.
- W4220664110 cites W1998922674 @default.
- W4220664110 cites W2001982262 @default.
- W4220664110 cites W2005367480 @default.
- W4220664110 cites W2005631730 @default.
- W4220664110 cites W2008316010 @default.
- W4220664110 cites W2010540469 @default.
- W4220664110 cites W2017475432 @default.
- W4220664110 cites W2020643633 @default.
- W4220664110 cites W2021080281 @default.
- W4220664110 cites W2027999503 @default.
- W4220664110 cites W2028947885 @default.
- W4220664110 cites W2033878899 @default.
- W4220664110 cites W2050755074 @default.
- W4220664110 cites W2054170609 @default.
- W4220664110 cites W2057262322 @default.
- W4220664110 cites W2069630665 @default.
- W4220664110 cites W2074267316 @default.
- W4220664110 cites W2077565069 @default.
- W4220664110 cites W2099276065 @default.
- W4220664110 cites W2100493202 @default.
- W4220664110 cites W2110132230 @default.
- W4220664110 cites W2111826330 @default.
- W4220664110 cites W2128913184 @default.
- W4220664110 cites W2131716975 @default.
- W4220664110 cites W2135954772 @default.
- W4220664110 cites W2173032012 @default.
- W4220664110 cites W2321090232 @default.
- W4220664110 cites W2408380084 @default.
- W4220664110 cites W2470200201 @default.
- W4220664110 cites W2558644822 @default.
- W4220664110 cites W2583557691 @default.
- W4220664110 cites W2585789530 @default.
- W4220664110 cites W2586282636 @default.
- W4220664110 cites W2597515268 @default.
- W4220664110 cites W2620240729 @default.
- W4220664110 cites W2743652601 @default.
- W4220664110 cites W2761551391 @default.
- W4220664110 cites W2772612848 @default.
- W4220664110 cites W2783528060 @default.
- W4220664110 cites W2789217012 @default.
- W4220664110 cites W2800264240 @default.
- W4220664110 cites W2805957194 @default.
- W4220664110 cites W2883793331 @default.
- W4220664110 cites W2897426245 @default.
- W4220664110 cites W2897549732 @default.
- W4220664110 cites W2910705519 @default.
- W4220664110 cites W2913582193 @default.
- W4220664110 cites W2928778839 @default.
- W4220664110 cites W2961540940 @default.
- W4220664110 cites W2975491058 @default.
- W4220664110 cites W2977396162 @default.
- W4220664110 cites W3003381469 @default.
- W4220664110 cites W3005034990 @default.
- W4220664110 cites W3005868094 @default.
- W4220664110 cites W3006835834 @default.
- W4220664110 cites W3009721145 @default.
- W4220664110 cites W3028412373 @default.
- W4220664110 cites W3038177482 @default.
- W4220664110 cites W3043727419 @default.
- W4220664110 cites W3044707466 @default.
- W4220664110 cites W3082469192 @default.
- W4220664110 cites W3092549562 @default.
- W4220664110 cites W3152962597 @default.
- W4220664110 cites W3154099660 @default.
- W4220664110 cites W3175013620 @default.
- W4220664110 cites W3197398027 @default.
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- W4220664110 doi "https://doi.org/10.1002/admi.202102584" @default.
- W4220664110 hasPublicationYear "2022" @default.
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