Matches in SemOpenAlex for { <https://semopenalex.org/work/W4220691837> ?p ?o ?g. }
- W4220691837 endingPage "1814" @default.
- W4220691837 startingPage "1807" @default.
- W4220691837 abstract "Based on a metal-oxide-semiconductor (MOS) structure, a double Schottky barrier junction (SBJ) made of NiO/graphene/4H-SiC is built and employed in ultraviolet (UV) detection. The hole concentration of NiO can be modulated as depleted or accumulated states with gate voltages, which allows the device to work in dual-mode when used as a photodetector. In this work, a negative gate bias causes the device to operate as a photoconductive detector with gain due to the negligible Schottky barrier, whereas a zero or positive gate bias makes it work as a Schottky photodiode. The device has a high responsivity of 103.3 A/W and a gain of 490.8 despite the low light intensity (261 nm laser @ 30.19 μW/cm2) at VDS = 5 V and VGS = −3 V. The NiO layer and SiC substrate both serve as UV absorption materials and produce photogenerated carriers, and the device has a wide UV response range from 240 to 400 nm with a gain of 80.34 when VDS = −3 V and VGS = 0 V at 240 nm. The above findings suggest that this MOS-based NiO/graphene/4H-SiC double SBJ has a great prospect in practical UV detection." @default.
- W4220691837 created "2022-04-03" @default.
- W4220691837 creator A5005586952 @default.
- W4220691837 creator A5014068882 @default.
- W4220691837 creator A5014145981 @default.
- W4220691837 creator A5016022830 @default.
- W4220691837 creator A5025243022 @default.
- W4220691837 creator A5028580161 @default.
- W4220691837 creator A5029554408 @default.
- W4220691837 creator A5032482570 @default.
- W4220691837 creator A5035955418 @default.
- W4220691837 creator A5039348177 @default.
- W4220691837 creator A5045654923 @default.
- W4220691837 creator A5064014162 @default.
- W4220691837 creator A5083967189 @default.
- W4220691837 creator A5085666180 @default.
- W4220691837 creator A5086167248 @default.
- W4220691837 date "2022-03-25" @default.
- W4220691837 modified "2023-09-29" @default.
- W4220691837 title "Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection" @default.
- W4220691837 cites W1969395060 @default.
- W4220691837 cites W2002253377 @default.
- W4220691837 cites W2008589163 @default.
- W4220691837 cites W2019702878 @default.
- W4220691837 cites W2020845493 @default.
- W4220691837 cites W2029646805 @default.
- W4220691837 cites W2032014241 @default.
- W4220691837 cites W2057152680 @default.
- W4220691837 cites W2058122340 @default.
- W4220691837 cites W2062814232 @default.
- W4220691837 cites W2091023923 @default.
- W4220691837 cites W2102253314 @default.
- W4220691837 cites W2135592020 @default.
- W4220691837 cites W2519696990 @default.
- W4220691837 cites W2536135121 @default.
- W4220691837 cites W2574172719 @default.
- W4220691837 cites W2775546200 @default.
- W4220691837 cites W2785654531 @default.
- W4220691837 cites W2789817852 @default.
- W4220691837 cites W2807700605 @default.
- W4220691837 cites W2807883346 @default.
- W4220691837 cites W2892449652 @default.
- W4220691837 cites W2906077243 @default.
- W4220691837 cites W2911498040 @default.
- W4220691837 cites W2912118168 @default.
- W4220691837 cites W2918533061 @default.
- W4220691837 cites W2921393362 @default.
- W4220691837 cites W2945305564 @default.
- W4220691837 cites W2952651815 @default.
- W4220691837 cites W2971349884 @default.
- W4220691837 cites W2977659608 @default.
- W4220691837 cites W3009621091 @default.
- W4220691837 cites W3033829971 @default.
- W4220691837 cites W3036516792 @default.
- W4220691837 cites W3038501618 @default.
- W4220691837 cites W3039974269 @default.
- W4220691837 cites W3042514039 @default.
- W4220691837 cites W3091861642 @default.
- W4220691837 cites W3125854122 @default.
- W4220691837 cites W3158088491 @default.
- W4220691837 cites W3163500622 @default.
- W4220691837 cites W3163534070 @default.
- W4220691837 cites W3164414943 @default.
- W4220691837 cites W3185441480 @default.
- W4220691837 cites W3190099961 @default.
- W4220691837 doi "https://doi.org/10.1021/acsaelm.2c00056" @default.
- W4220691837 hasPublicationYear "2022" @default.
- W4220691837 type Work @default.
- W4220691837 citedByCount "3" @default.
- W4220691837 countsByYear W42206918372022 @default.
- W4220691837 countsByYear W42206918372023 @default.
- W4220691837 crossrefType "journal-article" @default.
- W4220691837 hasAuthorship W4220691837A5005586952 @default.
- W4220691837 hasAuthorship W4220691837A5014068882 @default.
- W4220691837 hasAuthorship W4220691837A5014145981 @default.
- W4220691837 hasAuthorship W4220691837A5016022830 @default.
- W4220691837 hasAuthorship W4220691837A5025243022 @default.
- W4220691837 hasAuthorship W4220691837A5028580161 @default.
- W4220691837 hasAuthorship W4220691837A5029554408 @default.
- W4220691837 hasAuthorship W4220691837A5032482570 @default.
- W4220691837 hasAuthorship W4220691837A5035955418 @default.
- W4220691837 hasAuthorship W4220691837A5039348177 @default.
- W4220691837 hasAuthorship W4220691837A5045654923 @default.
- W4220691837 hasAuthorship W4220691837A5064014162 @default.
- W4220691837 hasAuthorship W4220691837A5083967189 @default.
- W4220691837 hasAuthorship W4220691837A5085666180 @default.
- W4220691837 hasAuthorship W4220691837A5086167248 @default.
- W4220691837 hasConcept C108225325 @default.
- W4220691837 hasConcept C16115445 @default.
- W4220691837 hasConcept C161790260 @default.
- W4220691837 hasConcept C171250308 @default.
- W4220691837 hasConcept C178889773 @default.
- W4220691837 hasConcept C185592680 @default.
- W4220691837 hasConcept C191897082 @default.
- W4220691837 hasConcept C192562407 @default.
- W4220691837 hasConcept C201999631 @default.
- W4220691837 hasConcept C205200001 @default.
- W4220691837 hasConcept C23125352 @default.