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- W4220725995 abstract "NiV/B 4 C multilayers with a small d-spacing are suitable for multilayer monochromator working at a photon energy region from 5 to 8 keV, or photon energy region from 10 to 100 keV. To investigate the influence of background pressure during fabrication, NiV/B 4 C multilayers with a d-spacing of 3.0 nm were fabricated by magnetron sputtering with different background pressures. The grazing incidence x-ray reflectivity (GIXR) and transmission electron microscopy (TEM) measurement illustrated the structural change that happened in NiV/B 4 C multilayers when background pressure is high. The electron dispersive x-ray spectroscopy (EDX) of NiV/B 4 C multilayer deposited with a high background pressure suggests a gradient distribution of oxygen, which corresponds to the gradient thickness change. The detailed x-ray absorption near edge spectroscopy (XANES) comparison of NiV/B 4 C multilayers, NiV coating, and B 4 C coating showed the chemical state change induced by background pressure. We concluded that during the deposition, vanadium oxide promoted the oxidation of boron. In order to fabricate a good performance of NiV/B 4 C multilayers, the background pressure needs lower than 1 × 10 −4 Pa." @default.
- W4220725995 created "2022-04-03" @default.
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- W4220725995 date "2022-03-10" @default.
- W4220725995 modified "2023-09-27" @default.
- W4220725995 title "Background Pressure Induced Structural and Chemical Change in NiV/B4C Multilayers Prepared by Magnetron Sputtering" @default.
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- W4220725995 doi "https://doi.org/10.3389/fphy.2022.837819" @default.
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