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• W4220763609 startingPage "275201" @default.
• W4220763609 abstract "In this work we use conductive atomic force microscopy (cAFM) to study the charge injection process from a nanoscale tip to a single isolated bilayer 2D MoS2flake. The MoS2is exfoliated and bonded to ultra-thin SiO2/Si substrate. Local current-voltage (IV) measurements conducted by cAFM provides insight in charge trapping/de-trapping mechanisms at the MoS2/SiO2interface. The MoS2nano-flake provides an adjustable potential barrier for embedded trap sites where the charge is injected from AFM tip is confined at the interface. A window of (ΔV∼ 1.8 V) is obtain at a reading current of 2 nA between two consecutiveIVsweeps. This is a sufficient window to differentiate between the two states indicating memory behavior. Furthermore, the physics behind the charge entrapment and its contribution to the tunneling mechanisms is discussed." @default.
• W4220763609 created "2022-04-03" @default.
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• W4220763609 date "2022-04-20" @default.
• W4220763609 modified "2023-09-27" @default.
• W4220763609 title "Utilizing trapped charge at bilayer 2D MoS₂/SiO₂ interface for memory applications" @default.
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• W4220763609 doi "https://doi.org/10.1088/1361-6528/ac61cd" @default.
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• W4220763609 hasPublicationYear "2022" @default.
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