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- W4220853889 abstract "We studied the Ti/Au Ohmic contact on (001) plane Ga 2 O 3 single crystal wafer as a function of annealing temperature and crystallographic orientation. The lowest specific contact resistances of ∼5 × 10 −4 Ω·cm 2 were obtained at 400 °C annealing temperature under nitrogen ambience. The Ohmic metal contact became degraded when annealed above 500 °C. The formation of Ti oxide might be responsible for the degradation of Ohmic contact at high annealing temperatures. In comparison with (010) Ga 2 O 3 substrate, the Ohmic contact could be more easily formed on <?CDATA $(bar{2}01)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> and (001) Ga 2 O 3 planes, possibly due to high surface energy and dangling bond density. It is notable that the contact properties did not show any particular dependence on in-plane azimuth angles on (001) Ga 2 O 3 substrate." @default.
- W4220853889 created "2022-04-03" @default.
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- W4220853889 date "2022-04-01" @default.
- W4220853889 modified "2023-10-18" @default.
- W4220853889 title "Low-Resistance Ti/Au Ohmic Contact on (001) Plane Ga<sub>2</sub>O<sub>3</sub> Crystal" @default.
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- W4220853889 doi "https://doi.org/10.1149/2162-8777/ac6118" @default.
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