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• W4220921707 abstract "Epitaxial graphene is a promising candidate for future carbon nanodevices. This thermally graphitized material from silicon carbide (SiC) substrate showed a distinctive property. In this chapter, we report particular mechanical and structural epitaxial graphene properties originating from a high thermal growth temperature. An optical, structural, and mechanical Raman investigation of epitaxial graphene grown on 4H-SiC substrate face terminated carbon has been given. The graphene layer number, degree of disorder, mechanical properties, and polarization effect have been studied. The Raman mapping analysis of four-layer graphene macro-island is illustrated in an homogeneously stressed area. A high-frequency blueshift of both 2D and G Raman modes has been located. A high dependency to the SiC substrate demonstrated a biaxial and uniaxial strain distribution across the macro-island. An opposite motion of the graphene and the substrate lattice during the sample cooling originated the local mechanical property's changes across the macro-island. The graphene thermal growth effect on the SiC substrate crystallographic structure has been studied through a polarized Raman spectrum. Two polarization configurations have been addressed: perpendicular “s” and parallel “p” configuration. A Bernal stacking of the substrate has been found even under thermal growth condition. We put interest to the substrate TO mode normally forbidden in parallel configurations (X, X) and (Y, Y) to illustrate our findings. A correlation with the polarization dependence of epitaxial graphene modes has been given. A Bernal stacking of the graphene layers grown on 4H-SiC substrate was deduced. The revealed physical images were demonstrated using Raman spectroscopy." @default.
• W4220921707 created "2022-04-03" @default.
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• W4220921707 date "2022-03-25" @default.
• W4220921707 modified "2023-10-14" @default.
• W4220921707 title "Raman Spectroscopy Characterization of Mechanical and Structural Properties of Epitaxial Graphene" @default.
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• W4220921707 doi "https://doi.org/10.1002/9783527833689.ch4" @default.
• W4220921707 hasPublicationYear "2022" @default.
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