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• W4220951093 abstract "High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observed in the layered semiconductor Bi2O2Se originates from an incipient ferroelectric transition that endows the material with a robust protection against mobility degradation by Coulomb scattering. Based on first-principles calculations of electron-phonon interaction and ionized impurity scattering, it is shown that the electron mobility of Bi2O2Se can reach 104 to 106 cm2 V-1 s-1 over a wide range of realistic doping concentrations. Furthermore, a small elastic strain of 1.7% can drive the material toward a unique interlayer ferroelectric transition, resulting in a large increase in the dielectric permittivity and a giant enhancement of the low-temperature electron mobility by more than an order of magnitude. These results establish a new route to realize high-mobility layered semiconductors via phase and dielectric engineering." @default.
• W4220951093 created "2022-04-03" @default.
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• W4220951093 date "2022-03-02" @default.
• W4220951093 modified "2023-10-09" @default.
• W4220951093 title "Giant Modulation of the Electron Mobility in Semiconductor Bi₂O₂Se via Incipient Ferroelectric Phase Transition" @default.
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• W4220951093 doi "https://doi.org/10.1021/jacs.1c12681" @default.
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