Matches in SemOpenAlex for { <https://semopenalex.org/work/W4221011894> ?p ?o ?g. }
- W4221011894 endingPage "2200005" @default.
- W4221011894 startingPage "2200005" @default.
- W4221011894 abstract "Electrically switchable bistable conductance that occurs in ferroelectric materials has attracted growing interest due to its promising applications in data storage and in-memory computing. Sc-alloyed III-nitrides have emerged as a new class of ferroelectrics, which not only enable seamless integration with III-nitride technology but also provide an alternative solution for CMOS back end of line integration. In this paper, the resistive switching behavior and memory effect in an ultrawide-bandgap, high Curie temperature, fully epitaxial ferroelectric ScAlN/GaN heterostructure is reported for the first time. The structure exhibits robust ON and OFF states that last for months at room temperature with rectifying ratios of 60–210, and further shows stable operation at high temperatures (≈670 K) that are close to or even above the Curie temperature of most conventional ferroelectrics. Detailed studies suggest that the underlying mechanism is directly related to a ferroelectric field effect induced charge reconstruction at the hetero-interface. The robust resistive switching landscape and the electrical polarization engineering capability in the polar heterostructure, together with the promise to integrate with both silicon and GaN technologies, can pave the way for next-generation memristors and further enable a broad range of multifunctional and cross-field applications." @default.
- W4221011894 created "2022-04-03" @default.
- W4221011894 creator A5001364519 @default.
- W4221011894 creator A5005588972 @default.
- W4221011894 creator A5013736647 @default.
- W4221011894 creator A5032844710 @default.
- W4221011894 creator A5070775523 @default.
- W4221011894 creator A5080454065 @default.
- W4221011894 creator A5085630701 @default.
- W4221011894 date "2022-03-15" @default.
- W4221011894 modified "2023-10-17" @default.
- W4221011894 title "An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory" @default.
- W4221011894 cites W1964047823 @default.
- W4221011894 cites W1978454146 @default.
- W4221011894 cites W1981342877 @default.
- W4221011894 cites W1987850127 @default.
- W4221011894 cites W2005135813 @default.
- W4221011894 cites W2005691559 @default.
- W4221011894 cites W2007272467 @default.
- W4221011894 cites W2007752431 @default.
- W4221011894 cites W2007978852 @default.
- W4221011894 cites W2011965307 @default.
- W4221011894 cites W2012825905 @default.
- W4221011894 cites W2016106189 @default.
- W4221011894 cites W2036046648 @default.
- W4221011894 cites W2039729460 @default.
- W4221011894 cites W2068421939 @default.
- W4221011894 cites W2078797539 @default.
- W4221011894 cites W2082622134 @default.
- W4221011894 cites W2090007112 @default.
- W4221011894 cites W2139436956 @default.
- W4221011894 cites W2160395018 @default.
- W4221011894 cites W2334220755 @default.
- W4221011894 cites W2604443664 @default.
- W4221011894 cites W2758214608 @default.
- W4221011894 cites W2805362231 @default.
- W4221011894 cites W2896704624 @default.
- W4221011894 cites W2910128286 @default.
- W4221011894 cites W2914770420 @default.
- W4221011894 cites W2917752795 @default.
- W4221011894 cites W3011088493 @default.
- W4221011894 cites W3017259890 @default.
- W4221011894 cites W3022995158 @default.
- W4221011894 cites W3038805143 @default.
- W4221011894 cites W3039968079 @default.
- W4221011894 cites W3087452423 @default.
- W4221011894 cites W3093817577 @default.
- W4221011894 cites W3094977730 @default.
- W4221011894 cites W3095256020 @default.
- W4221011894 cites W3096534270 @default.
- W4221011894 cites W3101930641 @default.
- W4221011894 cites W3103823004 @default.
- W4221011894 cites W3110647544 @default.
- W4221011894 cites W3122481316 @default.
- W4221011894 cites W3123096056 @default.
- W4221011894 cites W3126503310 @default.
- W4221011894 cites W3129038380 @default.
- W4221011894 cites W3133940875 @default.
- W4221011894 cites W3135538360 @default.
- W4221011894 cites W3137353107 @default.
- W4221011894 cites W3160015056 @default.
- W4221011894 cites W3164928942 @default.
- W4221011894 cites W3168526349 @default.
- W4221011894 cites W3172938434 @default.
- W4221011894 cites W3184733425 @default.
- W4221011894 cites W3191035958 @default.
- W4221011894 cites W3191812342 @default.
- W4221011894 cites W3193844498 @default.
- W4221011894 cites W3196949289 @default.
- W4221011894 cites W3200938800 @default.
- W4221011894 cites W3208661583 @default.
- W4221011894 cites W3209296097 @default.
- W4221011894 cites W4205753905 @default.
- W4221011894 doi "https://doi.org/10.1002/aelm.202200005" @default.
- W4221011894 hasPublicationYear "2022" @default.
- W4221011894 type Work @default.
- W4221011894 citedByCount "26" @default.
- W4221011894 countsByYear W42210118942022 @default.
- W4221011894 countsByYear W42210118942023 @default.
- W4221011894 crossrefType "journal-article" @default.
- W4221011894 hasAuthorship W4221011894A5001364519 @default.
- W4221011894 hasAuthorship W4221011894A5005588972 @default.
- W4221011894 hasAuthorship W4221011894A5013736647 @default.
- W4221011894 hasAuthorship W4221011894A5032844710 @default.
- W4221011894 hasAuthorship W4221011894A5070775523 @default.
- W4221011894 hasAuthorship W4221011894A5080454065 @default.
- W4221011894 hasAuthorship W4221011894A5085630701 @default.
- W4221011894 hasBestOaLocation W42210118941 @default.
- W4221011894 hasConcept C110738630 @default.
- W4221011894 hasConcept C119599485 @default.
- W4221011894 hasConcept C121332964 @default.
- W4221011894 hasConcept C127413603 @default.
- W4221011894 hasConcept C133386390 @default.
- W4221011894 hasConcept C171250308 @default.
- W4221011894 hasConcept C192562407 @default.
- W4221011894 hasConcept C194760766 @default.
- W4221011894 hasConcept C26873012 @default.
- W4221011894 hasConcept C2779227376 @default.