FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4221056768> ?p ?o ?g. }

• W4221056768 endingPage "139183" @default.
• W4221056768 startingPage "139183" @default.
• W4221056768 abstract "Synthesis of materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing. In particular, topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to compositional fluctuations and structural disorder that are difficult to control, even in a typical topological insulator such as the binary compound Bi2Te3. The addition of a third element, as in MnBi2Te4, makes the epitaxy of these materials even more chaotic. In this work, statistical modeling of MnxBi2Te3+x film structures is described. It allows the simulation of X-ray diffraction in disordered MnBi2Te4/Bi2Te3 heterostructures, a necessary step towards controlling the epitaxial growth of topological insulators with intrinsic magnetic properties. On top of this, the diffraction simulation method used here can be readily applied as a general tool in the field of materials design based on stacking of vdW bonded layers of distinct elements." @default.
• W4221056768 created "2022-04-03" @default.
• W4221056768 creator A5014952558 @default.
• W4221056768 creator A5029729307 @default.
• W4221056768 creator A5032701963 @default.
• W4221056768 creator A5036094568 @default.
• W4221056768 creator A5039916005 @default.
• W4221056768 creator A5066386572 @default.
• W4221056768 creator A5073857632 @default.
• W4221056768 creator A5082791909 @default.
• W4221056768 creator A5089563215 @default.
• W4221056768 date "2022-05-01" @default.
• W4221056768 modified "2023-10-17" @default.
• W4221056768 title "Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator" @default.
• W4221056768 cites W1552055731 @default.
• W4221056768 cites W1970188810 @default.
• W4221056768 cites W2001755358 @default.
• W4221056768 cites W2003380272 @default.
• W4221056768 cites W2008328388 @default.
• W4221056768 cites W2012184154 @default.
• W4221056768 cites W2016571999 @default.
• W4221056768 cites W2020249540 @default.
• W4221056768 cites W2020806925 @default.
• W4221056768 cites W2024865965 @default.
• W4221056768 cites W2033895260 @default.
• W4221056768 cites W2047205891 @default.
• W4221056768 cites W2048420150 @default.
• W4221056768 cites W2052201090 @default.
• W4221056768 cites W2072423028 @default.
• W4221056768 cites W2081574488 @default.
• W4221056768 cites W2083504518 @default.
• W4221056768 cites W2084380030 @default.
• W4221056768 cites W2095080705 @default.
• W4221056768 cites W2096421416 @default.
• W4221056768 cites W2104113248 @default.
• W4221056768 cites W2117591638 @default.
• W4221056768 cites W2120831645 @default.
• W4221056768 cites W2143493810 @default.
• W4221056768 cites W2155909195 @default.
• W4221056768 cites W2168703872 @default.
• W4221056768 cites W2230669838 @default.
• W4221056768 cites W2339432069 @default.
• W4221056768 cites W2345047028 @default.
• W4221056768 cites W2549650184 @default.
• W4221056768 cites W2554420136 @default.
• W4221056768 cites W2570057284 @default.
• W4221056768 cites W2659434059 @default.
• W4221056768 cites W2733455374 @default.
• W4221056768 cites W2761614910 @default.
• W4221056768 cites W2777471754 @default.
• W4221056768 cites W2790238878 @default.
• W4221056768 cites W2896456462 @default.
• W4221056768 cites W2897860842 @default.
• W4221056768 cites W2901274273 @default.
• W4221056768 cites W2918211554 @default.
• W4221056768 cites W2919328041 @default.
• W4221056768 cites W2974903895 @default.
• W4221056768 cites W3016763528 @default.
• W4221056768 cites W3037369876 @default.
• W4221056768 cites W3088524960 @default.
• W4221056768 cites W3092022443 @default.
• W4221056768 cites W3100380842 @default.
• W4221056768 cites W3101149514 @default.
• W4221056768 cites W3103698892 @default.
• W4221056768 cites W3122693272 @default.
• W4221056768 cites W3129854646 @default.
• W4221056768 cites W3142765396 @default.
• W4221056768 doi "https://doi.org/10.1016/j.tsf.2022.139183" @default.
• W4221056768 hasPublicationYear "2022" @default.
• W4221056768 type Work @default.
• W4221056768 citedByCount "1" @default.
• W4221056768 countsByYear W42210567682023 @default.
• W4221056768 crossrefType "journal-article" @default.
• W4221056768 hasAuthorship W4221056768A5014952558 @default.
• W4221056768 hasAuthorship W4221056768A5029729307 @default.
• W4221056768 hasAuthorship W4221056768A5032701963 @default.
• W4221056768 hasAuthorship W4221056768A5036094568 @default.
• W4221056768 hasAuthorship W4221056768A5039916005 @default.
• W4221056768 hasAuthorship W4221056768A5066386572 @default.
• W4221056768 hasAuthorship W4221056768A5073857632 @default.
• W4221056768 hasAuthorship W4221056768A5082791909 @default.
• W4221056768 hasAuthorship W4221056768A5089563215 @default.
• W4221056768 hasConcept C110738630 @default.
• W4221056768 hasConcept C114614502 @default.
• W4221056768 hasConcept C121332964 @default.
• W4221056768 hasConcept C126061179 @default.
• W4221056768 hasConcept C128911142 @default.
• W4221056768 hasConcept C155355069 @default.
• W4221056768 hasConcept C171250308 @default.
• W4221056768 hasConcept C184720557 @default.
• W4221056768 hasConcept C192562407 @default.
• W4221056768 hasConcept C197162081 @default.
• W4221056768 hasConcept C207999682 @default.
• W4221056768 hasConcept C26873012 @default.
• W4221056768 hasConcept C2779227376 @default.
• W4221056768 hasConcept C32909587 @default.
• W4221056768 hasConcept C33347731 @default.
• W4221056768 hasConcept C33923547 @default.

• next