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• W4221122839 abstract "Abstract Molecular beam epitaxy growth and analysis of GaAsBi on compositional step-graded InGaAs buffer layers are presented in this study. The developed buffer is only 240 nm thick, exhibits very low surface roughness while reaching up to 0.46% lattice-mismatch with a GaAs substrate. Reciprocal-space mappings showed that 500 nm thick GaAsBi layers with 2.7%–5.3% Bi remain pseudomorphic with the InGaAs buffer, in contrast to GaAsBi grown on GaAs that were found to incur up to 50% lattice relaxation. CuPt B -type ordering and associated polarized photoluminescence were also found in the bismide layers grown on the InGaAs buffers. Optical anisotropy of a strain-free 2.7% Bi GaAsBi was further analysed by a suite of optical techniques indicating that the valence band splitting is ∼40 meV. This study advances synthesis techniques of thick GaAsBi layers for optoelectronic device applications." @default.
• W4221122839 created "2022-04-03" @default.
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• W4221122839 date "2022-04-19" @default.
• W4221122839 modified "2023-09-30" @default.
• W4221122839 title "Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers" @default.
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• W4221122839 doi "https://doi.org/10.1088/1361-6641/ac61ff" @default.
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