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- W4223558663 abstract "Abstract Atomic layer etching is an advanced plasma etching technique that enables the atomic-precision control. In this study, the effects of surface conditions on the stability of the etched amount per cycle (EPC) in silicon nitride (SiN) plasma-enhanced atomic layer etching (PE-ALE) were examined. A single cycle of SiN PE-ALE consisted of two steps: hydrofluorocarbon (HFC) absorption step and argon-ion (Ar + ) desorption step. After a few cycles, an etch-stop of SiN occurred due to the HFC deposition. An oxygen-plasma ashing step was introduced after desorption step, which made three-step SiN PE-ALE. The etch-stop was avoided but the EPC was low due to the surface oxidation of SiN. By combining this three-step SiN PE-ALE with subsequent two-step SiO 2 PE-ALE, which consists of fluorocarbon adsorption step and Ar + desorption step, SiN PE-ALE was achieved with a stable and large EPC. This five-step SiN PE-ALE allows the precise control of SiN etched depth." @default.
- W4223558663 created "2022-04-15" @default.
- W4223558663 creator A5014454024 @default.
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- W4223558663 creator A5081500233 @default.
- W4223558663 date "2022-05-23" @default.
- W4223558663 modified "2023-09-25" @default.
- W4223558663 title "Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle" @default.
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- W4223558663 doi "https://doi.org/10.35848/1347-4065/ac61f6" @default.
- W4223558663 hasPublicationYear "2022" @default.
- W4223558663 type Work @default.