Matches in SemOpenAlex for { <https://semopenalex.org/work/W4223996141> ?p ?o ?g. }
- W4223996141 endingPage "1755" @default.
- W4223996141 startingPage "1741" @default.
- W4223996141 abstract "Silicon oxynitride (SiOxNy) thin films are widely encountered in today’s major key enabling technologies. Exhibiting tunable properties dependent on the nitrogen content, they attract attention in applications requiring thermal stability, high dielectric constant, corrosion resistance, surface passivation, and effective ion diffusion barrier. Identification of the minimum desired level of nitrogen incorporation for each application is important for simultaneously optimizing material properties and the deposition process. In this context, we study the structural and functional properties of SiOxNy films deposited from tris(dimethylsilyl)amine (TDMSA), O2, and NH3, using conveniently scalable atmospheric pressure chemical vapor deposition (CVD) at moderate temperature (600–650 °C). A suite of characterization techniques including spectroscopic ellipsometry (SE), Fourier-transform infrared spectroscopy (FT-IR), ion beam analyses (IBA), nanoindentation, nanoscratch, X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HR-TEM), water wettability, surface roughness, and resistance to wet etching corrosion are implemented in order to establish the relevant structure–composition–properties correlations. The produced SiOxNy films are smooth and amorphous, exhibiting beyond state-of-the art corrosion resistance in standard though particularly aggressive hydrofluoric buffer oxide etchant (BOE) 6:1 solution, with remarkable near-zero etching rate values. Compositional trends reveal the presence of C and H atoms, yet their incorporation has insignificant effect on the films RMS roughness and wet etching corrosion resistance. Coupled SE, FT-IR, and XPS analyses reveal that the SiOxNy network appears to undergo a sharp transition between 4 and 6 atom % N, affecting hardness and Young’s modulus. Globally, material properties such as scratch resistance, surface roughness, and corrosion resistance are improved with increasing nitrogen content. Additionally, the asymmetric stretching silicon nitride (Si3N4) FT-IR absorption at ca. 850 cm–1 is used to track the binding configuration in the amorphous SiOxNy network. Correlation of the elemental environment and chemical bonding to the corresponding process conditions can aid in identifying the process margins for desired intrinsic and/or functional properties." @default.
- W4223996141 created "2022-04-19" @default.
- W4223996141 creator A5012497993 @default.
- W4223996141 creator A5022671115 @default.
- W4223996141 creator A5028136806 @default.
- W4223996141 creator A5031493577 @default.
- W4223996141 creator A5034281561 @default.
- W4223996141 creator A5036770294 @default.
- W4223996141 creator A5037403602 @default.
- W4223996141 creator A5042145736 @default.
- W4223996141 creator A5047021668 @default.
- W4223996141 creator A5050691148 @default.
- W4223996141 creator A5054929301 @default.
- W4223996141 creator A5055061804 @default.
- W4223996141 creator A5067831029 @default.
- W4223996141 creator A5076641834 @default.
- W4223996141 creator A5077858175 @default.
- W4223996141 creator A5082512064 @default.
- W4223996141 creator A5083470681 @default.
- W4223996141 creator A5083471252 @default.
- W4223996141 creator A5085174539 @default.
- W4223996141 date "2022-04-12" @default.
- W4223996141 modified "2023-09-30" @default.
- W4223996141 title "Critical Level of Nitrogen Incorporation in Silicon Oxynitride Films: Transition of Structure and Properties, toward Enhanced Anticorrosion Performance" @default.
- W4223996141 cites W1505063095 @default.
- W4223996141 cites W1673855059 @default.
- W4223996141 cites W1970589460 @default.
- W4223996141 cites W1970721108 @default.
- W4223996141 cites W1979590199 @default.
- W4223996141 cites W1980357629 @default.
- W4223996141 cites W1985252036 @default.
- W4223996141 cites W1994993360 @default.
- W4223996141 cites W1996026665 @default.
- W4223996141 cites W1997261875 @default.
- W4223996141 cites W2002563683 @default.
- W4223996141 cites W2010573847 @default.
- W4223996141 cites W2027631221 @default.
- W4223996141 cites W2033220483 @default.
- W4223996141 cites W2034608688 @default.
- W4223996141 cites W2035067554 @default.
- W4223996141 cites W2038475786 @default.
- W4223996141 cites W2039828399 @default.
- W4223996141 cites W2041742454 @default.
- W4223996141 cites W2042135160 @default.
- W4223996141 cites W2043368942 @default.
- W4223996141 cites W2045380976 @default.
- W4223996141 cites W2045807741 @default.
- W4223996141 cites W2047211709 @default.
- W4223996141 cites W2047727338 @default.
- W4223996141 cites W2048455807 @default.
- W4223996141 cites W2048663181 @default.
- W4223996141 cites W2056308731 @default.
- W4223996141 cites W2062620250 @default.
- W4223996141 cites W2065178485 @default.
- W4223996141 cites W2065561552 @default.
- W4223996141 cites W2066554930 @default.
- W4223996141 cites W2070759131 @default.
- W4223996141 cites W2074815846 @default.
- W4223996141 cites W2075244594 @default.
- W4223996141 cites W2078585324 @default.
- W4223996141 cites W2083071485 @default.
- W4223996141 cites W2084859217 @default.
- W4223996141 cites W2086467088 @default.
- W4223996141 cites W2086933933 @default.
- W4223996141 cites W2089776862 @default.
- W4223996141 cites W2091908664 @default.
- W4223996141 cites W2092764428 @default.
- W4223996141 cites W2125960298 @default.
- W4223996141 cites W2143394828 @default.
- W4223996141 cites W2156726587 @default.
- W4223996141 cites W2157839322 @default.
- W4223996141 cites W2170268122 @default.
- W4223996141 cites W2315022437 @default.
- W4223996141 cites W2556961338 @default.
- W4223996141 cites W2563628046 @default.
- W4223996141 cites W2792231254 @default.
- W4223996141 cites W2794277508 @default.
- W4223996141 cites W2888866904 @default.
- W4223996141 cites W2900335357 @default.
- W4223996141 cites W2938722053 @default.
- W4223996141 cites W2969749606 @default.
- W4223996141 cites W2977678832 @default.
- W4223996141 cites W3042531849 @default.
- W4223996141 cites W3045646279 @default.
- W4223996141 cites W3112129638 @default.
- W4223996141 cites W3115691506 @default.
- W4223996141 cites W3154139830 @default.
- W4223996141 cites W3158742560 @default.
- W4223996141 cites W3161886485 @default.
- W4223996141 cites W3196549491 @default.
- W4223996141 cites W3212851876 @default.
- W4223996141 doi "https://doi.org/10.1021/acsaelm.2c00018" @default.
- W4223996141 hasPublicationYear "2022" @default.
- W4223996141 type Work @default.
- W4223996141 citedByCount "1" @default.
- W4223996141 countsByYear W42239961412023 @default.
- W4223996141 crossrefType "journal-article" @default.
- W4223996141 hasAuthorship W4223996141A5012497993 @default.