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- W4224135040 abstract "Herein, in delta‐doped β‐(Al x Ga 1–x ) 2 O 3 /β‐Ga 2 O 3 heterostructures, the 2D electron gas (2DEG) density is mainly limited by the low conduction‐band offset at the heterointerface. Double‐channel heterostructures may be a candidate solution for enhancing the 2DEG density in these heterostructures. In this study, the output characteristics, transfer, transconductance, and off‐state current characteristics of delta‐doped β‐(Al 0.17 Ga 0.83 ) 2 O 3 /β‐Ga 2 O 3 double‐channel heterostructure modulation‐doped field‐effect transistors (MODFETs), including the effects of an ultrathin spacer layer and a back‐barrier layer, are numerically evaluated. The electrical characteristics of the proposed double‐channel heterostructure MODFET are compared with those of a single‐channel heterostructure MODFET. The proposed double‐channel heterostructure MODFET shows a maximum drain current of 133.7 mA mm −1 and a g m peak of 40 mS mm −1 , which are higher than those in the single‐channel case. The calculated threshold voltage is −3.45 V. The dependence of the Si δ‐doping density in the second barrier and channel layer thickness on the electrical characteristics of the proposed device is evaluated and discussed. A β‐(Al 0.17 Ga 0.83 ) 2 O 3 /β‐Ga 2 O 3 superlattice back‐barrier structure is also implemented in delta‐doped β‐Ga 2 O 3 ‐based heterostructure MODFETs to improve their off‐state characteristics for the first time." @default.
- W4224135040 created "2022-04-20" @default.
- W4224135040 creator A5050063476 @default.
- W4224135040 creator A5053169867 @default.
- W4224135040 date "2022-04-14" @default.
- W4224135040 modified "2023-09-26" @default.
- W4224135040 title "Delta‐Doped β‐(Al <sub>0.17</sub> Ga <sub>0.83</sub> ) <sub>2</sub> O <sub>3</sub> /Ga <sub>2</sub> O <sub>3</sub> Double‐Channel Heterostructure MODFETs" @default.
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- W4224135040 doi "https://doi.org/10.1002/pssa.202100842" @default.
- W4224135040 hasPublicationYear "2022" @default.
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