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- W4224229076 abstract "The two-dimensional layered semiconductor InSe, with its high carrier mobility, chemical stability, and strong charge transfer ability, plays a crucial role in optoelectronic devices. The number of InSe layers (L) has an important influence on its band structure and optoelectronic properties. Herein we present systematic investigations on few-layer (1L-7L) γ-InSe by optical contrast and Raman spectroscopy. We propose three quantified formulas to quickly identify the layer number using optical contrast, the frequency difference of two A1 modes, and ultralow-frequency Raman spectroscopy, respectively. Moreover, angle-resolved polarization Raman spectra show that γ-InSe is isotropic in the a-b plane. Furthermore, using Raman mapping, we find that the relative strength of the low-frequency interlayer shear modes is particularly sensitive to the interaction between the sample and the substrate." @default.
- W4224229076 created "2022-04-26" @default.
- W4224229076 creator A5005660466 @default.
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- W4224229076 date "2022-04-19" @default.
- W4224229076 modified "2023-09-27" @default.
- W4224229076 title "Layer Number-Dependent Raman Spectra of γ-InSe" @default.
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- W4224229076 doi "https://doi.org/10.1021/acs.jpclett.2c00504" @default.
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