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• W4224261569 abstract "Abstract High power microwave Schottky barrier diodes (SBDs) are required to develop detectors and mixers in advance the millimeter-wave (mm-wave) wireless technologies such as fifth generation long-term evolution. To achieve high efficiency and sensitivity in SBDs, materials/structures with high mobility and low series resistance are needed. In this regard, we have proposed the two dimensional electron gas of β -(Al x Ga <?CDATA $_{1-x}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mi /> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) 2 O 3 /Ga 2 O 3 heterostructure channel lateral SBDs (LSBDs) for the first time. To design high performance LSBDs, detailed physical models of both β -(Al x Ga <?CDATA $_{1-x}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mi /> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) 2 O 3 and Ga 2 O 3 were studied and characterized with experimental results. These physical models were used to perform realistic numerical simulations of DC, small signal and large signal conditions. It was observed that the structural and compositional aspects of heterostructure are largely influencing the small signal sensitivity and cut-off frequencies. Also the large signal analysis reveals that the LSBD can operate in linear detection of microwave signals, up to 38 dBm. By scaling down the device to a sub-micron channel length, a cut-off frequency of <?CDATA $gt$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo>></mml:mo> </mml:math> 1.5 THz was achieved in the proposed LSBD. Comparison with state-of-the-art SBDs, the observations from DC, small signal and large signal analysis recommend the proposed β -(Al x Ga <?CDATA $_{1-x}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mi /> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) 2 O 3 /Ga 2 O 3 LSBDs for high power and mm-wave/sub-THz detector/mixer application." @default.
• W4224261569 created "2022-04-26" @default.
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• W4224261569 date "2022-05-03" @default.
• W4224261569 modified "2023-09-24" @default.
• W4224261569 title "Design of microwave β-(Al_xGa 1− _x)₂O₃/Ga₂O₃ lateral Schottky barrier diodes" @default.
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• W4224261569 doi "https://doi.org/10.1088/1361-6641/ac688e" @default.
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