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- W4224274301 abstract "In this work, a novel AlGaN/GaN lateral field-effect rectifier (L-FER) with ultralow turn-on voltage (VT) and low reverse leakage current (IR) is proposed and verified by technology computer aided design (TCAD) Sentaurus. Through shortly contacting the short-channel metal–oxide–semiconductor (MOS) structure with an Ohmic-contact structure as the anode of the proposed L-FER, an ultralow VT can be realized. And by inserting a floating clamp (FC) electrode near the cathode-side MOS edge, the transverse channel potential at the MOS edge could be clamped to a small value. Thus, the high IR induced by the short-channel effect in the MOS structure could be suppressed. In contrast to the conventional short-channel L-FER, the proposed FC-L-FER exhibits about four orders of magnitude reduction in IR, without obvious degeneration in the forward current and VT. Moreover, the proposed FC-L-FER also delivers excellent reverse recovery characteristics." @default.
- W4224274301 created "2022-04-26" @default.
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- W4224274301 date "2022-04-22" @default.
- W4224274301 modified "2023-10-16" @default.
- W4224274301 title "Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage" @default.
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- W4224274301 doi "https://doi.org/10.1049/mna2.12122" @default.
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