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- W4224300953 abstract "This study explores the degradation of silicon-based bipolar junction transistors (BJTs) exposed to a californium-252 source. Both n–p–n and p–n–p BJTs received neutron irradiation of different fluxes (6.3 × 104 cm −2 s−1 to 1.5 × 106 cm −2 s−1). The proportion of the change of reciprocal current gain to neutron fluence increases with the decrease of neutron flux, implying that devices exposed to irradiation of lower neutron flux will suffer severer radiation damage if the total neutron fluence is kept constant. Results obtained by eliminating the impact of accompanying gamma irradiation and the impact of different neutron energy spectra from the degradation of BJTs confirmed this conclusion for both types of BJTs. A kinetic model based on the theory of diffusion-limited reactions was used to analyze the microscopic mechanism, and its results agreed with the experimental results. The simulation results also indicate that lower neutron flux favors the formation of stable defects and reduces the recombination of vacancies and interstitials. This work demonstrates that neutron flux effect also exists in silicon-based BJTs exposed to a californium-252 source and it is related to the defect evolution process in irradiated materials." @default.
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- W4224300953 date "2022-07-01" @default.
- W4224300953 modified "2023-10-14" @default.
- W4224300953 title "Neutron flux effect in silicon-based bipolar junction transistors exposed to californium-252" @default.
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- W4224300953 doi "https://doi.org/10.1016/j.nima.2022.166743" @default.
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