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- W4224312755 abstract "Semiconductor devices technology evolved from MOSFETs planar architecture to FinFETs and Si Gate-All-Around Nanowires (Si GAA NW) FETs structural design. This evolution has continuously decreased the values of transistors threshold voltage and extraction method errors become very important. Different methods for threshold voltage determination will be evaluated in this paper using measured data of GAA NW FETs integrated on a Silicon on Insulator (SOI) substrate, operated both in linear and saturation regions. Differences from the threshold voltage extracted values are studied in this paper." @default.
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- W4224312755 date "2022-08-01" @default.
- W4224312755 modified "2023-10-03" @default.
- W4224312755 title "Si GAA NW FETs threshold voltage evaluation" @default.
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- W4224312755 doi "https://doi.org/10.1016/j.sse.2022.108317" @default.
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