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- W4224440706 endingPage "108356" @default.
- W4224440706 startingPage "108356" @default.
- W4224440706 abstract "• Al 2 O 3 /GaN MOS capacitance measurements with n-doped GaN, NID-GaN and p-GaN have been analysed with 1D Schödinger-Poisson simulations. • Quantum capacitance better matches experimental data. • N A - - N D + is extracted in p-GaN using 1/C2 vs VG method. • In Al 2 O 3 /p-GaN case, the negative charge induced by p-doping is most likely compensated by positive charges at the oxide level, which prevents the increase of V TH . This paper investigates the turning-on-voltage (V FB /V TH ) of Al 2 O 3 /GaN MOS stacks with n-doped GaN, p-doped GaN and not intentionally doped (NID) GaN by exploiting capacitance measurements on large gate area test structures with systematic variation of Al 2 O 3 thickness (t ox ). Measurements are compared with 1D Schrödinger-Poisson simulations including incomplete ionization model. The necessity of using a quantum description of electron density is demonstrated especially for thinner gate oxides. We found that, contrary to what is expected, p-doping below the channel barely increases the V TH and the V TH is independent of t ox , even if the density of activated acceptors is demonstrated to be sufficiently high. Our results highly suggest that the negative charge induced by p-doping is compensated at the oxide level." @default.
- W4224440706 created "2022-04-27" @default.
- W4224440706 creator A5002159223 @default.
- W4224440706 creator A5003829640 @default.
- W4224440706 creator A5006612290 @default.
- W4224440706 creator A5011270757 @default.
- W4224440706 creator A5050554959 @default.
- W4224440706 creator A5075656637 @default.
- W4224440706 creator A5075695175 @default.
- W4224440706 creator A5079873180 @default.
- W4224440706 date "2022-08-01" @default.
- W4224440706 modified "2023-10-02" @default.
- W4224440706 title "Effect of doping on Al2O3/GaN MOS capacitance" @default.
- W4224440706 cites W1986565837 @default.
- W4224440706 cites W2738108498 @default.
- W4224440706 cites W2788013722 @default.
- W4224440706 cites W3008793026 @default.
- W4224440706 cites W3196892657 @default.
- W4224440706 cites W3213499216 @default.
- W4224440706 doi "https://doi.org/10.1016/j.sse.2022.108356" @default.
- W4224440706 hasPublicationYear "2022" @default.
- W4224440706 type Work @default.
- W4224440706 citedByCount "0" @default.
- W4224440706 crossrefType "journal-article" @default.
- W4224440706 hasAuthorship W4224440706A5002159223 @default.
- W4224440706 hasAuthorship W4224440706A5003829640 @default.
- W4224440706 hasAuthorship W4224440706A5006612290 @default.
- W4224440706 hasAuthorship W4224440706A5011270757 @default.
- W4224440706 hasAuthorship W4224440706A5050554959 @default.
- W4224440706 hasAuthorship W4224440706A5075656637 @default.
- W4224440706 hasAuthorship W4224440706A5075695175 @default.
- W4224440706 hasAuthorship W4224440706A5079873180 @default.
- W4224440706 hasBestOaLocation W42244407061 @default.
- W4224440706 hasConcept C121332964 @default.
- W4224440706 hasConcept C17525397 @default.
- W4224440706 hasConcept C192562407 @default.
- W4224440706 hasConcept C30066665 @default.
- W4224440706 hasConcept C49040817 @default.
- W4224440706 hasConcept C57863236 @default.
- W4224440706 hasConcept C62520636 @default.
- W4224440706 hasConceptScore W4224440706C121332964 @default.
- W4224440706 hasConceptScore W4224440706C17525397 @default.
- W4224440706 hasConceptScore W4224440706C192562407 @default.
- W4224440706 hasConceptScore W4224440706C30066665 @default.
- W4224440706 hasConceptScore W4224440706C49040817 @default.
- W4224440706 hasConceptScore W4224440706C57863236 @default.
- W4224440706 hasConceptScore W4224440706C62520636 @default.
- W4224440706 hasFunder F4320323911 @default.
- W4224440706 hasLocation W42244407061 @default.
- W4224440706 hasOpenAccess W4224440706 @default.
- W4224440706 hasPrimaryLocation W42244407061 @default.
- W4224440706 hasRelatedWork W1989006700 @default.
- W4224440706 hasRelatedWork W2007105916 @default.
- W4224440706 hasRelatedWork W2052710927 @default.
- W4224440706 hasRelatedWork W2140847386 @default.
- W4224440706 hasRelatedWork W2327026624 @default.
- W4224440706 hasRelatedWork W2470837056 @default.
- W4224440706 hasRelatedWork W2743194952 @default.
- W4224440706 hasRelatedWork W2774293966 @default.
- W4224440706 hasRelatedWork W2892788169 @default.
- W4224440706 hasRelatedWork W3137451328 @default.
- W4224440706 hasVolume "194" @default.
- W4224440706 isParatext "false" @default.
- W4224440706 isRetracted "false" @default.
- W4224440706 workType "article" @default.