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- W4224442007 abstract "Flat and dense SiO2 (the most widely used oxide material in integrated circuit (IC) technology) films could facilitate the rapid scaling down of semiconductor devices. Herein, a DC power of 1-kV was used for the electron-beam irradiation (EBI) of sputtered-SiO2 films on glass. Within 5 min of EBI treatment, at room temperature, the SiO2 films exhibited 10% increase in density, and 25% decrease in surface roughness compared to as-sputtered SiO2. XPS results indicated that 1-kV EBI modulated the density and surface roughness of SiO2 films, without affecting their chemical bonding and atomic ratio. Therefore, low-energy EBI could be used as an efficient method to enhance the characteristics of SiO2 thin films for semiconductor applications." @default.
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- W4224442007 date "2022-08-01" @default.
- W4224442007 modified "2023-09-30" @default.
- W4224442007 title "Densification of SiO2 films via low-energy electron-beam irradiation" @default.
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- W4224442007 doi "https://doi.org/10.1016/j.matlet.2022.132319" @default.
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