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• W4224442611 endingPage "22038" @default.
• W4224442611 startingPage "22031" @default.
• W4224442611 abstract "ε-(AlxGa1-x)2O3 alloy thin films containing Al fractions of 0, 2.9 at%, and 4.7 at% with ε-Ga2O3 templates were fabricated on (0001) c-sapphire by tin-assisted PLD technique. Sn is a surface-mediated surfactant to stabilize the formation of epsilon phase. XRD reveals that the peak position of ε-(AlxGa1-x)2O3 shifts to a higher diffraction angle and that ε-(AlxGa1-x)2O3 is accompanied by a deterioration of crystal quality when the Al composition increases from 0 to 4.7 at%. With Al content increasing, XPS demonstrates the appearance of more aluminum atoms bound to oxygen atoms and higher oxygen vacancy density in ε-(AlxGa1-x)2O3 films. The optical bandgap for ε-(AlxGa1−x)2O3 thin films with various Al components are 4.97 eV, 5.09 eV and 5.16 eV, respectively. The solar-blind photodetectors were fabricated on ε-(AlxGa1-x)2O3 alloy thin films with various Al fractions. The photo-to-dark current ratio, responsiveness, detectivity and response time (rise time/decay time) for ε-(AlxGa1-x)2O3 (x = 2.9 at%) PDs were 2.7 × 103, 4.2 A/W, 1.23 × 1013 Jones and 2.09 s/0.49 s." @default.
• W4224442611 created "2022-04-27" @default.
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• W4224442611 date "2022-08-01" @default.
• W4224442611 modified "2023-10-14" @default.
• W4224442611 title "Trace Al component in ε-(AlxGa1-x)2O3 alloy films and film-based solar-blind photodetectors" @default.
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• W4224442611 doi "https://doi.org/10.1016/j.ceramint.2022.04.193" @default.
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