FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4224861808> ?p ?o ?g. }

• W4224861808 endingPage "1362" @default.
• W4224861808 startingPage "1362" @default.
• W4224861808 abstract "In this work, an anomalous thick oxide-degradation phenomenon in n-type 650-V class super-junction VDMOS transistors is investigated. An unexpected threshold voltage (Vt) decrease was observed with high positive bias temperature instability stress, and the saturation current (IDsat) increases with the stress time. Repeatable and reproducible behaviors have been achieved from multiple devices under test. Based on simulation and experimental results, it is found that the high-energy electrons (caused by high positive gate voltage) in the n-type region at the bottom of the gate oxide layer (top of the N-pillar) are injected into the gate oxide. The high-energy electrons generate electron-hole pairs during the transport to the anode, leaving holes in the gate oxide layer, and thus decreased Vt and increased IDsat. Finally, C-V measurement is also carried out which further confirms the above analysis." @default.
• W4224861808 created "2022-04-27" @default.
• W4224861808 creator A5006570442 @default.
• W4224861808 creator A5025552571 @default.
• W4224861808 creator A5036798751 @default.
• W4224861808 creator A5042849419 @default.
• W4224861808 creator A5052805520 @default.
• W4224861808 date "2022-04-25" @default.
• W4224861808 modified "2023-09-25" @default.
• W4224861808 title "Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress" @default.
• W4224861808 cites W1600691640 @default.
• W4224861808 cites W1996770285 @default.
• W4224861808 cites W2051747677 @default.
• W4224861808 cites W2082503907 @default.
• W4224861808 cites W2094144417 @default.
• W4224861808 cites W2098045174 @default.
• W4224861808 cites W2108096931 @default.
• W4224861808 cites W2109258263 @default.
• W4224861808 cites W2134099485 @default.
• W4224861808 cites W2139423216 @default.
• W4224861808 cites W2141034448 @default.
• W4224861808 cites W2144788598 @default.
• W4224861808 cites W2157713259 @default.
• W4224861808 cites W2168422417 @default.
• W4224861808 cites W2171424669 @default.
• W4224861808 cites W2802984095 @default.
• W4224861808 cites W1976768552 @default.
• W4224861808 cites W2140230792 @default.
• W4224861808 doi "https://doi.org/10.3390/electronics11091362" @default.
• W4224861808 hasPublicationYear "2022" @default.
• W4224861808 type Work @default.
• W4224861808 citedByCount "2" @default.
• W4224861808 countsByYear W42248618082023 @default.
• W4224861808 crossrefType "journal-article" @default.
• W4224861808 hasAuthorship W4224861808A5006570442 @default.
• W4224861808 hasAuthorship W4224861808A5025552571 @default.
• W4224861808 hasAuthorship W4224861808A5036798751 @default.
• W4224861808 hasAuthorship W4224861808A5042849419 @default.
• W4224861808 hasAuthorship W4224861808A5052805520 @default.
• W4224861808 hasBestOaLocation W42248618081 @default.
• W4224861808 hasConcept C114614502 @default.
• W4224861808 hasConcept C119599485 @default.
• W4224861808 hasConcept C121332964 @default.
• W4224861808 hasConcept C127413603 @default.
• W4224861808 hasConcept C138885662 @default.
• W4224861808 hasConcept C147120987 @default.
• W4224861808 hasConcept C147789679 @default.
• W4224861808 hasConcept C155891486 @default.
• W4224861808 hasConcept C165801399 @default.
• W4224861808 hasConcept C172385210 @default.
• W4224861808 hasConcept C17525397 @default.
• W4224861808 hasConcept C185592680 @default.
• W4224861808 hasConcept C191897082 @default.
• W4224861808 hasConcept C192562407 @default.
• W4224861808 hasConcept C195370968 @default.
• W4224861808 hasConcept C21036866 @default.
• W4224861808 hasConcept C2361726 @default.
• W4224861808 hasConcept C2779851234 @default.
• W4224861808 hasConcept C33923547 @default.
• W4224861808 hasConcept C41895202 @default.
• W4224861808 hasConcept C49040817 @default.
• W4224861808 hasConcept C557185 @default.
• W4224861808 hasConcept C62520636 @default.
• W4224861808 hasConcept C89395315 @default.
• W4224861808 hasConcept C9930424 @default.
• W4224861808 hasConceptScore W4224861808C114614502 @default.
• W4224861808 hasConceptScore W4224861808C119599485 @default.
• W4224861808 hasConceptScore W4224861808C121332964 @default.
• W4224861808 hasConceptScore W4224861808C127413603 @default.
• W4224861808 hasConceptScore W4224861808C138885662 @default.
• W4224861808 hasConceptScore W4224861808C147120987 @default.
• W4224861808 hasConceptScore W4224861808C147789679 @default.
• W4224861808 hasConceptScore W4224861808C155891486 @default.
• W4224861808 hasConceptScore W4224861808C165801399 @default.
• W4224861808 hasConceptScore W4224861808C172385210 @default.
• W4224861808 hasConceptScore W4224861808C17525397 @default.
• W4224861808 hasConceptScore W4224861808C185592680 @default.
• W4224861808 hasConceptScore W4224861808C191897082 @default.
• W4224861808 hasConceptScore W4224861808C192562407 @default.
• W4224861808 hasConceptScore W4224861808C195370968 @default.
• W4224861808 hasConceptScore W4224861808C21036866 @default.
• W4224861808 hasConceptScore W4224861808C2361726 @default.
• W4224861808 hasConceptScore W4224861808C2779851234 @default.
• W4224861808 hasConceptScore W4224861808C33923547 @default.
• W4224861808 hasConceptScore W4224861808C41895202 @default.
• W4224861808 hasConceptScore W4224861808C49040817 @default.
• W4224861808 hasConceptScore W4224861808C557185 @default.
• W4224861808 hasConceptScore W4224861808C62520636 @default.
• W4224861808 hasConceptScore W4224861808C89395315 @default.
• W4224861808 hasConceptScore W4224861808C9930424 @default.
• W4224861808 hasFunder F4320321885 @default.
• W4224861808 hasIssue "9" @default.
• W4224861808 hasLocation W42248618081 @default.
• W4224861808 hasLocation W42248618082 @default.
• W4224861808 hasOpenAccess W4224861808 @default.
• W4224861808 hasPrimaryLocation W42248618081 @default.
• W4224861808 hasRelatedWork W1517134236 @default.
• W4224861808 hasRelatedWork W155171871 @default.

• next