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- W4225295082 endingPage "117994" @default.
- W4225295082 startingPage "117994" @default.
- W4225295082 abstract "In the past years, Ge2Sb2Te5 has been considered a promising functional material for a variety of reconfigurable multilevel devices, including photonic integrated circuits for the post-von Neumann arithmetic processing. However, despite significant advances, it is necessary to reduce the switching energy of Ge2Sb2Te5 for creation of the on-chip low power all-photonic spiking neural networks. The present work focuses on the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films, as well as on the performance of Mach-Zehnder interferometers and balanced beam splitters based on them. As a result, Sn-doping accompanied by the formation of weaker bonds in Ge2Sb2Te5 thin films is an efficient approach to significantly reduce the threshold energy of fs-laser initiated phase transitions and change the effective absorption coefficient. The possibility of using the Sn-doped Ge2Sb2Te5 thin films for fully optical multilevel reversible recording between 9 different levels (3 bits) has been demonstrated by experimental measurements of fabricated on-chip balanced beam splitters. The obtained results show that the Sn doping of Ge2Sb2Te5 layer can be used to optimize the properties of the GST225 thin films, in particular to reduce the switching energy. So, it has the potential to improve the characteristics of reconfigurable multilevel nanophotonic devices using the GST225 thin films, including fully non-volatile memory and developed on-chip low power all-photonic circuits for post-von Neumann arithmetic processing." @default.
- W4225295082 created "2022-05-05" @default.
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- W4225295082 date "2022-08-01" @default.
- W4225295082 modified "2023-10-15" @default.
- W4225295082 title "Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films" @default.
- W4225295082 cites W1521642446 @default.
- W4225295082 cites W1653808870 @default.
- W4225295082 cites W1661709965 @default.
- W4225295082 cites W1852759101 @default.
- W4225295082 cites W1953238867 @default.
- W4225295082 cites W1967211168 @default.
- W4225295082 cites W1968809175 @default.
- W4225295082 cites W1973277109 @default.
- W4225295082 cites W1978446829 @default.
- W4225295082 cites W1985594507 @default.
- W4225295082 cites W1988278509 @default.
- W4225295082 cites W2004363635 @default.
- W4225295082 cites W2015611592 @default.
- W4225295082 cites W2017425716 @default.
- W4225295082 cites W2027628493 @default.
- W4225295082 cites W2027940374 @default.
- W4225295082 cites W2030181971 @default.
- W4225295082 cites W2055794073 @default.
- W4225295082 cites W2057011276 @default.
- W4225295082 cites W2067413305 @default.
- W4225295082 cites W2068464894 @default.
- W4225295082 cites W2071810704 @default.
- W4225295082 cites W2074856613 @default.
- W4225295082 cites W2075001996 @default.
- W4225295082 cites W2079971206 @default.
- W4225295082 cites W2086092262 @default.
- W4225295082 cites W2092498889 @default.
- W4225295082 cites W2094145655 @default.
- W4225295082 cites W2095060130 @default.
- W4225295082 cites W2106429577 @default.
- W4225295082 cites W2111065128 @default.
- W4225295082 cites W2126166111 @default.
- W4225295082 cites W2154694290 @default.
- W4225295082 cites W2186845553 @default.
- W4225295082 cites W2200176946 @default.
- W4225295082 cites W2212741528 @default.
- W4225295082 cites W2220870060 @default.
- W4225295082 cites W2283961254 @default.
- W4225295082 cites W2294670071 @default.
- W4225295082 cites W2313363896 @default.
- W4225295082 cites W2394662238 @default.
- W4225295082 cites W2517248528 @default.
- W4225295082 cites W2587271569 @default.
- W4225295082 cites W2601824814 @default.
- W4225295082 cites W2740400597 @default.
- W4225295082 cites W2753322673 @default.
- W4225295082 cites W2767215064 @default.
- W4225295082 cites W2797501353 @default.
- W4225295082 cites W2801904554 @default.
- W4225295082 cites W2806160043 @default.
- W4225295082 cites W2809229285 @default.
- W4225295082 cites W2885879346 @default.
- W4225295082 cites W2886211001 @default.
- W4225295082 cites W2887708990 @default.
- W4225295082 cites W2888207280 @default.
- W4225295082 cites W2888295252 @default.
- W4225295082 cites W2891205705 @default.
- W4225295082 cites W2913182752 @default.
- W4225295082 cites W2914384582 @default.
- W4225295082 cites W2938570066 @default.
- W4225295082 cites W2943399925 @default.
- W4225295082 cites W2944119451 @default.
- W4225295082 cites W2947545750 @default.
- W4225295082 cites W2968049758 @default.
- W4225295082 cites W2969246650 @default.
- W4225295082 cites W2972853293 @default.
- W4225295082 cites W2990581955 @default.
- W4225295082 cites W2997033483 @default.
- W4225295082 cites W3014267345 @default.
- W4225295082 cites W3041268832 @default.
- W4225295082 cites W3103145197 @default.
- W4225295082 cites W3105100006 @default.
- W4225295082 cites W90545676 @default.
- W4225295082 doi "https://doi.org/10.1016/j.actamat.2022.117994" @default.
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