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- W4225300648 abstract "Ferroelectric emerging memories have been found to perfectly act as ultra-low power synaptic weights but require a deeper investigation before their actual introduction in brain inspired computing platforms. In particular, the understanding of the physical mechanisms occurring during the lifetime of the ferroelectric tunnel junction memories is fundamental for the development of reliable neuromorphic circuits. In this respect, in this work we combined an extended stress/measure sequence and a newly proposed and validated small signal model to provide insights on the degradation mechanisms occurring in these devices. The model considers the known voltage and frequency dependence of the material properties, the impact of the interface and bulk traps, and separates the leakage contributions of the layers. Results reveal that reliability is ultimately limited by the defect generation in the ferroelectric with stress. Asymmetry in the polarization-dependent leakage increase (due to defect generation) is found, that is associated with the different stages (wake-up, fatigue, aging) of the device lifetime. Suggestions on the possible optimization of the pulse design for improving the useful lifetime of the device are also reported." @default.
- W4225300648 created "2022-05-05" @default.
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- W4225300648 date "2022-03-01" @default.
- W4225300648 modified "2023-10-02" @default.
- W4225300648 title "Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions" @default.
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- W4225300648 doi "https://doi.org/10.1109/irps48227.2022.9764602" @default.
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